Abstract:Graphene, a monolayer of carbon atoms tightly packed into a two-dimensional (2D) hexagonal lattice, has recently been successfully isolated from highly ordered pyrolytic graphite (HOPG) and shown to be thermodynamically stable and to exhibit astonishing transport properties, such as an electron mobility of 25;000 cm2=Vs and velocity of 10 cm=s at room temperature [1–3]. With the high carrier mobility enabled by its unique electronic structure, graphene has attracted many research efforts recently. Initial works have demonstrated the great potential of graphene for modern electronics applications. These efforts are focused on overcoming the challenges faced to incorporate graphene into microelectronic applications. The three particular challenges are developing a synthesis technique to manufacture graphene over wafer-scale areas, opening an energy bandgap in graphene, and forming a high-quality gate dielectric on the surface of graphene. An interesting differentiation between the many well-established semiconductor materials in microelectronic industry and graphene is how it was discovered. Most semiconductor materials are created through deposition or melt processes, but the origin of graphene is unique. The first successfully isolated sheet of graphene was formed by Geim and Novoselov through a mechanical exfoliation technique which used cellophane tape to remove and subsequently transfer graphene sheets from HOPG to SiO2 [2]. This produced graphitic flakes tens of microns in size upon which electronic devices were fabricated. The pioneering work on isolating graphene has been recognized by earning its discoverers the Nobel Prize in Physics for 2010. Since the mechanical exfoliation technique does not require expensive equipment, this approach is still widely used for research purposes. Various alternative methods have been studied and developed to fabricate uniform graphene

The Transport and Quantum Capacitance Properties of Epitaxial Graphene

Measurement of the Quantum Capacitance of Graphene

The emergence of quantum capacitance in epitaxial graphene

Influence of Interface Traps and Electron-Hole Puddles on Quantum Capacitance and Conductivity in Graphene Field-Effect Transistors

Mobility Extraction and Quantum Capacitance Impact in High Performance Graphene Field-effect Transistor Devices

Epitaxial Graphene Electronic Structure And Transport

Transport properties of epitaxial graphene formed on the surface of a superconductor

Quantum And Transport Conductivities In Monolayer Graphene

Direct Extraction of Carrier Mobility in Graphene Field-Effect Transistor Using Current-Voltage and Capacitance-Voltage Measurements

A Phenomenological Model for the Quantum Capacitance of Monolayer and Bilayer Graphene Devices

Quantum Capacitance Measurements of Electron-Hole Asymmetry and Next-Nearest-neighbor Hopping in Graphene

Interaction Phenomena In Graphene Seen Through Quantum Capacitance

Accessing The Transport Properties Of Graphene And Its Multilayers At High Carrier Density

Quantum Transport in Double-Gated Graphene Devices

Contrasting Transport Performance of Electron- and Hole-Doped Epitaxial Graphene for Quantum Resistance Metrology

Measurements And Microscopic Model Of Quantum Capacitance In Graphene

Epitaxially Grown Graphene Field-Effect Transistors with Electron Mobility Exceeding 1500 Cm2/vs and Hole Mobility Exceeding 3400 Cm2/vs

Theory and Measurements of Room Temperature Transport in Graphene Using Sio2 Backgate and Electrochemical Gate

Er intercalation and its impact on transport properties of epitaxial graphene

Chapter 6 Magneto-Transport on Epitaxial Graphene

Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)