Abstract:A high-quality Y2O3 dielectric layer has been grown directly on graphene and used to fabricated top-gate graphene field-effect transistors (FETs), and the thickness of the dielectric layer has been reduced continuously down to 3.9 nm with an equivalent oxide thickness (EOT) of 1.5 nm and excellent insulativity. By measuring CV characteristics of two graphene FETs with different gate oxide thicknesses, the oxide capacitance and quantum capacitance are retrieved directly from the experimental CV data without introducing any additional fitting process and parameters, yielding a relative dielectric constant of κ=10 for Y2O3 on graphene and an oxide capacitance of about 2.28 μF/cm2. It is found that for a rather large gate voltage range, this oxide capacitance is comparable and sometimes even larger than the quantum capacitance of graphene. Since the total gate capacitance is determined by the smaller of the oxide and quantum capacitance, our results show that not much further improvement can be gained via further vertical scaling down of the gate oxide, suggesting that Y2O3 may be the ultimate dielectric material for graphene. It is also shown that the Y2O3 gate dielectric layer with EOT of 1.5 nm may also satisfy the ultimate lateral scaling requirement on the gate length of graphene FET and be used effectively to control a graphene FET with a gate length as small as 1 nm.

Measurements And Microscopic Model Of Quantum Capacitance In Graphene

Measurement of the Quantum Capacitance of Graphene

A Phenomenological Model for the Quantum Capacitance of Monolayer and Bilayer Graphene Devices

Quantum Capacitance Measurements of Electron-Hole Asymmetry and Next-Nearest-neighbor Hopping in Graphene

Interaction Phenomena In Graphene Seen Through Quantum Capacitance

A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

Capacitance modeling of complex topographical silicon quantum dot structures

The Transport and Quantum Capacitance Properties of Epitaxial Graphene

Density of States and Its Local Fluctuations Determined by Capacitance of Strongly Disordered Graphene

A MOS Quantum Tunneling Analytical Model Based on Theory of Density Gradient

Quantum capacitance limited vertical scaling of graphene field-effect transistor.

Capacitance-voltage characteristics of a metal-carbon-silicon structure

Understanding Capacitance Variation in Sub-Nanometer Pores by In-Situ Tuning of Interlayer Constrictions.

Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model

Direct Extraction of Carrier Mobility in Graphene Field-Effect Transistor Using Current-Voltage and Capacitance-Voltage Measurements

Modeling On Direct Tunneling Current In Ultra-Thin Oxide Nmosfet Considering Quantum Mechanics

Quantum Mechanical Consideration On Mosfet'S Characteristics And Scaling

Mobility Extraction and Quantum Capacitance Impact in High Performance Graphene Field-effect Transistor Devices

Direct Tunneling Current Model for MOS Devices with Ultra-Thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

Probing Defect-Induced Midgap States in MoS<sub>2</sub>Through Graphene-MoS<sub>2</sub>Heterostructures