Chapter 6 Magneto-Transport on Epitaxial Graphene

Peide D. Ye,Michael Capano,Tian Shen,Yanqing Wu,Michael L. Bolen

2012-01-01

Abstract:Graphene, a monolayer of carbon atoms tightly packed into a two-dimensional (2D) hexagonal lattice, has recently been successfully isolated from highly ordered pyrolytic graphite (HOPG) and shown to be thermodynamically stable and to exhibit astonishing transport properties, such as an electron mobility of 25;000 cm2=Vs and velocity of 10 cm=s at room temperature [1–3]. With the high carrier mobility enabled by its unique electronic structure, graphene has attracted many research efforts recently. Initial works have demonstrated the great potential of graphene for modern electronics applications. These efforts are focused on overcoming the challenges faced to incorporate graphene into microelectronic applications. The three particular challenges are developing a synthesis technique to manufacture graphene over wafer-scale areas, opening an energy bandgap in graphene, and forming a high-quality gate dielectric on the surface of graphene. An interesting differentiation between the many well-established semiconductor materials in microelectronic industry and graphene is how it was discovered. Most semiconductor materials are created through deposition or melt processes, but the origin of graphene is unique. The first successfully isolated sheet of graphene was formed by Geim and Novoselov through a mechanical exfoliation technique which used cellophane tape to remove and subsequently transfer graphene sheets from HOPG to SiO2 [2]. This produced graphitic flakes tens of microns in size upon which electronic devices were fabricated. The pioneering work on isolating graphene has been recognized by earning its discoverers the Nobel Prize in Physics for 2010. Since the mechanical exfoliation technique does not require expensive equipment, this approach is still widely used for research purposes. Various alternative methods have been studied and developed to fabricate uniform graphene