Room-temperature electric field effect and carrier-type inversion in graphene films

K.S. Novoselov,A.K. Geim,S.V. Morozov,S.V. Dubonos,Y. Zhang,D. Jiang

DOI: https://doi.org/10.48550/arXiv.cond-mat/0410631

2004-10-25

Abstract:The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a semiconductor device and, consequently, change an electric current through it. As the semiconductor industry is nearing the limits of performance improvements for the current technologies dominated by silicon, there is a constant search for new, non-traditional materials whose properties can be controlled by electric field. Most notable examples of such materials developed recently are organic conductors [1], oxides near a superconducting or magnetic phase transition [2] and carbon nanotubes [3-5]. Here, we describe another system of this kind - thin monocrystalline films of graphite - which exhibits a pronounced electric field effect, such that carriers in the conductive channel can be turned into either electrons or holes. The films remain metallic, continuous and of high quality down to a few atomic layers in thickness. The demonstrated ease of preparing such films of nearly macroscopic sizes and of their processing by standard microfabrication techniques, combined with submicron-scale ballistic transport even at room temperature, offer a new two-dimensional system controllable by electric-field doping and provide a realistic promise of device applications.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to explore how to control the electronic properties of graphene films through the electric - field effect and achieve the inversion of carrier types. Specifically, the researchers hope to find a method that can change the carrier concentration and type (from electrons to holes or vice versa) in graphene films by applying an external voltage at room temperature, thus making it possible to develop new electronic devices.

### Research Background and Problem Description

1. **Requirements of Modern Electronics**
- Modern electronics relies on controlling the electronic properties of materials by externally applying a voltage, a phenomenon known as the electric - field effect. It allows for changing the carrier concentration in semiconductor devices, thereby changing the current.
- As silicon - based technology approaches its performance limits, there is an urgent need to find new, non - traditional materials whose electronic properties can be effectively controlled by electric fields.

2. **Limitations of Existing Materials**
- Traditional metals, due to their high carrier density, cannot significantly change their electronic properties through the electric - field effect.
- Semi - metals (such as graphite) have a lower carrier concentration and can theoretically change their properties through the electric - field effect, but very thin semi - metal films are usually unstable and discontinuous.

3. **Unique Advantages of Graphene**
- Graphene is a two - dimensional material with a stable layered structure and can maintain metallic properties even at a thickness of a few nanometers.
- Graphene's high mobility and good mechanical stability make it an ideal candidate material for developing new electric - field - controllable electronic devices.

### Core Problems of the Paper

- **How to Prepare High - Quality Graphene Films**: The researchers need to find a method to prepare graphene films that are thin and continuous enough and ensure their stability under environmental conditions.
- **The Influence of the Electric - Field Effect on Graphene**: Verify whether the carrier concentration and type in graphene films can be significantly changed through the electric - field effect, thereby achieving the transition from an electron conductor to a hole conductor.
- **Potential Application Prospects**: Explore the application potential of this controllable graphene film in future electronic devices (such as field - effect transistors, chemical sensors, etc.).

### Formula Explanation

The formulas involved in the paper are mainly used to describe the influence of the electric - field effect on carrier concentration:

\[ n=\frac{\epsilon_0 \epsilon_r V_g}{e t} \]

where:
- \( n \) is the surface charge density,
- \( \epsilon_0 \) is the vacuum permittivity,
- \( \epsilon_r \) is the relative permittivity of silicon oxide,
- \( V_g \) is the gate voltage,
- \( e \) is the electron charge,
- \( t \) is the thickness of the silicon oxide layer.

Through this formula, researchers can estimate the change in carrier concentration in graphene films under different gate voltages.

### Summary

This paper aims to demonstrate the possibility of achieving carrier - type inversion in graphene films through the electric - field effect at room temperature and provides a theoretical and technical basis for the future development of graphene - based electronic devices.