Abstract:The constituent particles of matter can arrange themselves in various ways, giving rise to emergent phenomena that can be surprisingly rich and often cannot be understood by studying only the individual constituents. Discovering and understanding the emergence of such phenomena in quantum materials—especially those in which multiple degrees of freedom or energy scales are delicately balanced—is of fundamental interest to condensed-matter research<sup><a href="/articles/s41586-020-2970-9#ref-CR1">1</a>,<a href="/articles/s41586-020-2970-9#ref-CR2">2</a></sup>. Here we report on the surprising observation of emergent ferroelectricity in graphene-based moiré heterostructures. Ferroelectric materials show electrically switchable electric dipoles, which are usually formed by spatial separation between the average centres of positive and negative charge within the unit cell. On this basis, it is difficult to imagine graphene—a material composed of only carbon atoms—exhibiting ferroelectricity<sup><a href="/articles/s41586-020-2970-9#ref-CR3">3</a></sup>. However, in this work we realize switchable ferroelectricity in Bernal-stacked bilayer graphene sandwiched between two hexagonal boron nitride layers. By introducing a moiré superlattice potential (via aligning bilayer graphene with the top and/or bottom boron nitride crystals), we observe prominent and robust hysteretic behaviour of the graphene resistance with an externally applied out-of-plane displacement field. Our systematic transport measurements reveal a rich and striking response as a function of displacement field and electron filling, and beyond the framework of conventional ferroelectrics. We further directly probe the ferroelectric polarization through a non-local monolayer graphene sensor. Our results suggest an unconventional, odd-parity electronic ordering in the bilayer graphene/boron nitride moiré system. This emergent moiré ferroelectricity may enable ultrafast, programmable and atomically thin carbon-based memory devices.

Ferroelectrically driven spatial carrier density modulation in graphene

Electrostatic Modulation of the Lateral Carrier Density Profile in Field Effect Devices with Nonlinear Dielectrics

Graphene Field Effect Transistors with Ferroelectric Gating

Gate-controlled guiding of electrons in graphene

Electrical Control of Magnetic Proximity Effect in a Graphene/multiferroic Heterostructure

Tunable lateral spin polarization and spin-dependent collimation in velocity-modulated ferromagnetic-gate graphene structures

Self-aligned local electrolyte gating of 2D materials with nanoscale resolution

Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor

Room-temperature electric field effect and carrier-type inversion in graphene films

Graphene Dirac Point Tuned by Ferroelectric Polarization Field

Device Architectures for Low Voltage and Ultrafast Graphene Integrated Phase Modulators

Electronic ferroelectricity in monolayer graphene for multifunctional neuromorphic electronics

Unconventional ferroelectricity in moiré heterostructures

Coexistence of metallic and insulating-like states in graphene

Nontrivial temperature behavior of the carrier concentration in the nanostructure "graphene channel on ferroelectric substrate with domain walls"

Substantially enhanced carrier mobility in graphene in proximity to ferromagnetic insulator EuS

Magnetic Domain Wall Transfer Via Graphene Mediated Electrostatic Control

Ferroelectric Domain Triggers the Charge Modulation in Semiconductors (Invited)

Giant Frequency Tunability Enabled by External Magnetic and a Gate Electric Fields in Graphene Devices

Reversible writing of high-mobility and high-carrier-density doping patterns in two-dimensional van der Waals heterostructures