Abstract:Abstract A semiconductor/dielectric interface is one of the dominant factors in device characteristics, and a variety of oxides with high dielectric constants and low interface trap densities have been used in carbon nanotube transistors. Given the crystal structure of nanotubes with no dangling bonds, there remains room to investigate unconventional dielectric materials. Here, we fabricate carbon nanotube transistors with boron nitride nanotubes as interfacial layers between channels and gate dielectrics, where a single semiconducting nanotube is used to focus on switching behaviors at the subthreshold regime. The subthreshold swing of 68 mV·dec −1 is obtained despite a 100-nm-thick SiO 2 dielectric, corresponding to the effective interface trap density of 5.2 × 10 11 cm −2 ·eV −1 , one order of magnitude lower than those of carbon nanotube devices without boron nitride passivation. The interfacial layers also result in the mild suppression of threshold voltage variation and hysteresis. We achieve Ohmic contacts through the selective etching of boron nitride nanotubes with XeF 2 gas, overcoming the trade-off imposed by wrapping the inner nanotubes. Negligible impacts of fluorinating carbon nanotubes on device performances are also confirmed as long as the etching is applied exclusively at source/drain regions. Our results represent an important step toward nanoelectronics that exploit the advantage of one-dimensional van der Waals heterostructures.

High-performance top-gated graphene-nanoribbon transistors using zirconium oxide nanowires as high-dielectric-constant gate dielectrics.

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Direct Integration of Ferroelectric Hafnium Zirconium Oxide as Top-Gate High−κ Dielectrics for Two-Dimensional Transistors

High-speed graphene transistors with a self-aligned nanowire gate

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Growth and Performance of Yttrium Oxide as an Ideal High-κ Gate Dielectric for Carbon-Based Electronics

Growth and performance of yttrium oxide as an ideal high-kappa gate dielectric for carbon-based electronics.

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High-Performance Zno Nanowire Field-Effect Transistor With Forming Gas Treated Sio2 Gate Dielectrics

Coaxial boron nitride nanotubes as interfacial dielectric layers to lower interface trap density in carbon nanotube transistors

Carbon nanotube transistors with graphene oxide films as gate dielectrics