Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

Realization of Graphene Field-Effect Transistor with High-Κ HCa2Nb3O10 Nanoflake As Top-Gate Dielectric

Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics.

High-Kappa Oxide Nanoribbons As Gate Dielectrics For High Mobility Top-Gated Graphene Transistors

Carbon nanotube transistors with graphene oxide films as gate dielectrics

High-performance CdS:P Nanoribbon Field-Effect Transistors Constructed with High-Κ Dielectric and Top-Gate Geometry

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene

Atomic-Layer-Deposition Growth of an Ultrathin HfO2 Film on Graphene.

Effect of Top Dielectric Medium on Gate Capacitance of Graphene Field Effect Transistors: Implications in Mobility Measurements and Sensor Applications

Optimizing the fabrication process for high performance graphene field effect transistors.

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

Quantum capacitance limited vertical scaling of graphene field-effect transistor.

Nonlinear Current-Voltage Characteristics and Enhanced Negative Differential Conductance in Graphene Field Effect Transistors.

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

High Performance Top-Gated Ferroelectric Field Effect Transistors Based on Two-Dimensional ZnO Nanosheets

High- k Monolayer CaF 2 as the Gate Dielectric for Two-Dimensional SiC-Based Field-Effect Transistors

High-performance top-gated graphene-nanoribbon transistors using zirconium oxide nanowires as high-dielectric-constant gate dielectrics.

High-speed graphene transistors with a self-aligned nanowire gate

Sub-kT/q Switching in In2O3 Nanowire Negative Capacitance Field-Effect Transistors