Abstract:Publication date: 31 May 2022 Source: Materials Science Forum Vol. 1062 Author(s): Sofia Aslanidou, Alberto García-García, Gemma Rius, Philippe Godignon Current electronics technology increasingly demands higher integration, flexibility, higher efficiency, and performance aspects such as compatibility with higher temperature operation of the semiconductor devices, which may find limitations when silicon is used. The superior intrinsic properties of SiC, eventually combined with the ability of growing monolithically epitaxial, high quality graphene on a SiC wafer (1), makes it a reliable alternative for some electronic applications, such as field effect transistors (FET), radio frequency (RF) power amplifiers, integrated circuits (IC), or sensors. In this work, we describe the fabrication and preliminary electrical characterizations of epitaxial graphene (EG) on a SiC substrate FET devices based on an alternative back gate architecture. We propose a new approach in which the FET device is built on a 4◦ off-axis cut, N+ doped 4H-SiC substrate (the back gate) with, on top of, it a 1μm semi-insulating homoepitaxial layer of SiC compensated with vanadium (the dielectric layer). EG will be used as FET conduction channel. Using this V-compensated dielectric layer is aimed to minimize effects on the FET characteristics such as from defects in the SiC crystal, especially below the FET active areas, which would have occurred when using ion implantation to create a buried gate. The EG film was grown by the high temperature Si sublimation method under an Ar ambient. Raman spectroscopy, Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were applied in the structural characterization of epigraphene. The lack of D-peak in Raman spectra, together with SEM and AFM images, indicate that high quality monolayer to few layer epitaxial graphene fully covering the SiC surface is deposited. The electrical characteristics of the EG channel-devices and the functionality of the bottom gate were examined with 2-probe and 4-probe method. The electrical properties of the FET devices were also investigated with 3 terminal configuration.

Graphene on Silicon Hybrid Field-Effect Transistors

Systhesis and Devices of Graphene

Fabrication and Characterization of Epitaxial Graphene Field Effect Transistor Devices Based on a Monolithic Bottom Gate

Graphene-Silicon Hybrid Drift Device

Tuning On-Off Current Ratio and Field-Effect Mobility in A Mos2-Graphene Heterostructure Via Schottky Barrier Modulation

Graphene Transistors for Bioelectronics

Field-Effect Transistors Based on Single-Layer Graphene and Graphene-Derived Materials

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Graphene/Si CMOS hybrid hall integrated circuits.

Graphene Transistors for Interfacing with Cells: Towards a Deeper Understanding of Liquid Gating and Sensitivity

Graphene-GaAs/AlxGa1−xAs heterostructure dual-function field-effect transistor

Graphene/Si CMOS Hybrid Hall Integrated Circuits

Investigating the Performance and Viability of Semiconducting Graphene As A Substitute for Silicon in Field Effect Transistors

High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes

Partially-Screened Field Effect and Selective Carrier Injection at Organic Semiconductor / Graphene Heterointerface.

HyFET—A GaN/SiC Hybrid Field-Effect Transistor

Top‐ and Side‐gated Epitaxial Graphene Field Effect Transistors

Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture

Top-gate Engineering of Field-Effect Transistors Based on Single Layers of MoS2 and Graphene

(Invited) Graphene FETs: Promises and Challenges