Abstract:Publication date: 31 May 2022 Source: Materials Science Forum Vol. 1062 Author(s): Sofia Aslanidou, Alberto García-García, Gemma Rius, Philippe Godignon Current electronics technology increasingly demands higher integration, flexibility, higher efficiency, and performance aspects such as compatibility with higher temperature operation of the semiconductor devices, which may find limitations when silicon is used. The superior intrinsic properties of SiC, eventually combined with the ability of growing monolithically epitaxial, high quality graphene on a SiC wafer (1), makes it a reliable alternative for some electronic applications, such as field effect transistors (FET), radio frequency (RF) power amplifiers, integrated circuits (IC), or sensors. In this work, we describe the fabrication and preliminary electrical characterizations of epitaxial graphene (EG) on a SiC substrate FET devices based on an alternative back gate architecture. We propose a new approach in which the FET device is built on a 4◦ off-axis cut, N+ doped 4H-SiC substrate (the back gate) with, on top of, it a 1μm semi-insulating homoepitaxial layer of SiC compensated with vanadium (the dielectric layer). EG will be used as FET conduction channel. Using this V-compensated dielectric layer is aimed to minimize effects on the FET characteristics such as from defects in the SiC crystal, especially below the FET active areas, which would have occurred when using ion implantation to create a buried gate. The EG film was grown by the high temperature Si sublimation method under an Ar ambient. Raman spectroscopy, Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were applied in the structural characterization of epigraphene. The lack of D-peak in Raman spectra, together with SEM and AFM images, indicate that high quality monolayer to few layer epitaxial graphene fully covering the SiC surface is deposited. The electrical characteristics of the EG channel-devices and the functionality of the bottom gate were examined with 2-probe and 4-probe method. The electrical properties of the FET devices were also investigated with 3 terminal configuration.

A Field-Effect-Transistor from Graphite: No Effect of Low Gate Fields

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

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Fabrication and Characterization of Epitaxial Graphene Field Effect Transistor Devices Based on a Monolithic Bottom Gate

Atomistic Boron-Doped Graphene Field Effect Transistors: A Route towards Unipolar Characteristics

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Dirac-cone Induced Gating Enhancement in Single-Molecule Field-Effect Transistors

Graphene Field Effect Transistors with Ferroelectric Gating

Tuning On-Off Current Ratio and Field-Effect Mobility in A Mos2-Graphene Heterostructure Via Schottky Barrier Modulation

A Graphene Field-Effect Device

Monolayer graphene/hexagonal boron nitride heterostructure

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor

Making A Field Effect Transistor On A Single Graphene Nanoribbon By Selective Doping

Novel Field Effect Transistor Fabrication Based on Non-Graphene 2D Materials

MoS2/graphene Lateral Heterostructure Field Effect Transistors.

N‐type Dirac‐Source Field‐Effect Transistors Based on a Graphene/Carbon Nanotube Heterojunction

Implanted Bottom Gate for Epitaxial Graphene on Silicon Carbide

Intrinsic graphene field effect transistor on amorphous carbon films

Top‐ and Side‐gated Epitaxial Graphene Field Effect Transistors