Abstract:Vertical integration of van der Waals (vdW) materials with atomic precision is an intriguing possibility brought forward by these two-dimensional (2D) materials. Essential to the design and analysis of these structures is a fundamental understanding of the vertical transport of charge carriers into and across vdW materials, yet little has been done in this area. In this report, we explore the important roles of single layer graphene in the vertical tunneling process as a tunneling barrier. Although a semimetal in the lateral lattice plane, graphene together with the vdW gap act as a tunneling barrier that is nearly transparent to the vertically tunneling electrons due to its atomic thickness and the transverse momenta mismatch between the injected electrons and the graphene band structure. This is accentuated using electron tunneling spectroscopy (ETS) showing a lack of features corresponding to the Dirac cone band structure. Meanwhile, the graphene acts as a lateral conductor through which the potential and charge distribution across the tunneling barrier can be tuned. These unique properties make graphene an excellent 2D atomic grid, transparent to charge carriers, and yet can control the carrier flux via the electrical potential. A new model on the quantum capacitance's effect on vertical tunneling is developed to further elucidate the role of graphene in modulating the tunneling process. This work may serve as a general guideline for the design and analysis of vdW vertical tunneling devices and heterostructures, as well as the study of electron/spin injection through and into vdW materials.

Exotic Tunneling Resistance in Graphene/topological Insulator Vertical Junction

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

A Study of Vertical Transport Through Graphene Toward Control of Quantum Tunneling

Electronic Coupling Between Graphene and Topological Insulator Induced Anomalous Magnetotransport Properties

Highly Tunable Carrier Tunneling in Vertical Graphene-WS2-Graphene Van Der Waals Heterostructures.

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Tunneling properties of vertical heterostructures of multilayer hexagonal boron nitride and graphene

Proximity-induced superconductivity in epitaxial topological insulator/graphene/gallium heterostructures

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures

Common-Path Interference and Zener Tunneling in Bilayer Graphene p-n Junctions

Tunneling Spectroscopy of Quantum Hall States in Bilayer Graphene p-n Junctions

Experimental realization of single electron tunneling diode based on vertical graphene two-barrier junction

Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization

Tunneling States In Graphene Heterostructures Consisting Of Two Different Graphene Superlattices

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Field-Effect Tunneling between Quantum Valley Hall Edge States and Topological Transistors Based on Bilayer Graphene

Vertical WS2/SnS2 Van Der Waals Heterostructure for Tunneling Transistors.

Confined State and Electronic Transport in an Artificial Graphene-Based Tunnel Junction

Tunneling Spectroscopy of Metal-Oxide-graphene Structure

Bilayer Insulator Tunnel Barriers for Graphene-Based Vertical Hot-electron Transistors