Abstract:The ground state of a graphene sheet at charge neutrality in a perpendicular magnetic field remains enigmatic, with various experiments supporting canted antiferromagnetic, bond ordered, and even charge density wave phases. A promising avenue to elucidating the nature of this state is to sandwich it between regions of different filling factors, and study spin-dependent tunneling across the edge modes at the interfaces. Here we report on tunnel transport through a $\nu=0$ region in a graphite-gated, hexagonal boron nitride ($hBN$) encapsulated monolayer graphene device, with the $\nu=0$ strip sandwiched by spin-polarized $\nu=\pm1$ quantum Hall states. We observe finite tunneling ($t \sim 0.3-0.6$) between the $\nu=\pm1$ edges at not too small magnetic fields ($B>3T$) and low tunnel bias voltage ($<30-60\mu V$), which is surprising because electrons at the edge states nominally have opposite spins. Hartree-Fock calculations elucidate these phenomena as being driven by the formation of a CAF order parameter in the $\nu=0$ region at zero bias (for wide enough junctions) leading to non-orthogonal spins at the edges. Remarkably, this tunneling can be controllably switched off by increasing bias; bias voltage leads to a pileup of charge at the junction, leading to a collapse of the CAF order and a suppression of the tunneling.

Tunneling Spectroscopy of Quantum Hall States in Bilayer Graphene p-n Junctions

Edge-state Transport in Graphenep−njunctions in the Quantum Hall Regime

Quantum Transport and Field-Induced Insulating States in Bilayer Graphene Pnp Junctions

Selective Transmission of Quantum Hall Edge Channels in Graphene

Selective manipulation and tunneling spectroscopy of broken-symmetry quantum Hall states in a hybrid-edge quantum point contact

Modeling Klein Tunneling and Caustics of Electron Waves in Graphene

Field-Effect Tunneling between Quantum Valley Hall Edge States and Topological Transistors Based on Bilayer Graphene

Spatially Resolving Unconventional Interface Landau Quantization In A Graphene Monolayer-Bilayer Planar Junction

Controllable Tunnel Coupling and Molecular States in a Graphene Double Quantum Dot

Tunneling States In Graphene Heterostructures Consisting Of Two Different Graphene Superlattices

Tunneling between Two Quantum Hall Droplets

High-Resolution Tunneling Spectroscopy of Fractional Quantum Hall States

Tunneling Spectroscopy of Graphene-Boron Nitride Heterostructures

Quantum Hall Effects in Monolayer-Bilayer Graphene Planar Junctions

Common-Path Interference and Zener Tunneling in Bilayer Graphene p-n Junctions

Resonant Tunneling Through Double-Barrier Structures on Graphene

Quantum Transport in Double-Gated Graphene Devices

Quantum interference and Klein tunneling in graphene heterojunctions

Electrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in $ν=0$ state

Quantum Hall Effect in a Graphene p-n Junction