Abstract:We report on tunneling experiment between two quantum Hall droplets separated by a nearly ideal tunnel barrier. The device is produced by cleaved edge overgrowth that laterally juxtaposes two two-dimensional electron systems across a high quality semiconductor barrier. The dramatic evolution of the tunneling characteristics is consistent with the magnetic field-dependent tunneling between the coupled edge states of the quantum Hall droplets. We identify a series of quantum critical points between successive strong and weak tunneling regimes that are reminiscent of the plateau-transitions in quantum Hall effect. Scaling analysis shows that the conductance near the critical magnetic fields $B_{c}$ is a function of a single scaling argument $|B-B_{c}|T^{-\kappa}$, where the exponent $\kappa = 0.42$. This puzzling resemblance to a quantum Hall-insulator transition points to the significance of interedge correlation in the lateral tunneling of quantum Hall droplets.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the physical mechanism of tunneling phenomena between two quantum Hall droplets, especially how these tunneling characteristics evolve with the change of magnetic field. Specifically, the author focuses on: 1. **Evolution of tunneling characteristics with magnetic field**: The author observes that the tunneling characteristics between two quantum Hall droplets change significantly under different magnetic fields. In particular, at certain critical magnetic fields $B_c$, the tunneling conductance exhibits a series of quantum phase - transition points. 2. **Identification and explanation of quantum phase - transition points**: The author discovers multiple quantum critical points, which separate the strong - tunneling and weak - tunneling regions. These critical points are similar to the metal - insulator transitions in two - dimensional systems, indicating that the interactions between edge states play an important role in the tunneling process. 3. **Scaling analysis and exponential characteristics**: Through scaling analysis, the author finds that the conductance near the critical magnetic field can be expressed as a single scaling parameter $|B - B_c|T^{-\kappa}$, where the exponent $\kappa\approx0.42$. This result is similar to the scaling behavior in the quantum Hall - insulator transition, suggesting a strong correlation between edge states. ### Specific problem description The core problem of this paper is to understand the tunneling behavior between edge states in the quantum Hall effect and explore the physical mechanism behind this behavior. Specifically: - **Experimental background**: The experimental setup consists of two two - dimensional electron systems (2DES) separated by a high - quality semiconductor potential barrier. Tunneling can be achieved between these systems by adjusting the magnetic field. - **Main findings**: The author observes significant oscillations of the tunneling conductance with the change of magnetic field and discovers multiple critical points on the high - magnetic - field side. These critical points separate the strong - tunneling and weak - tunneling regions, and their behavior is similar to the quantum phase transitions in two - dimensional systems. - **Theoretical explanations**: The author proposes two possible theoretical explanations: 1. **Energy - level mixing model**: The tunneling conductance peaks occur when the energy levels of the two edge states are aligned with the Fermi level. 2. **Coupled Luttinger liquid model**: The tunneling conductance peaks are caused by the spontaneous coherence and interactions between edge states. ### Conclusion The main conclusion of the paper is that in the tunneling process between quantum Hall droplets, there are a series of quantum phase - transition points, and the behavior of these phase - transition points is similar to that of the quantum Hall - insulator transition. This indicates that the strong interactions between edge states play a crucial role in the tunneling process and may reveal new physical phenomena in the quantum Hall effect. Through these studies, the author hopes to further understand the properties of edge states in the quantum Hall effect and their interaction mechanisms, thereby providing a theoretical and experimental basis for future research.

Tunneling between Two Quantum Hall Droplets

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