Abstract:The existence of inequivalent valleys K and K' in the momentum space of two-dimensional hexagonal lattices provides a new electronic degree of freedom, the manipulation of which can potentially lead to new types of electronics, in analogy to the role played by electron spin. In materials with broken inversion symmetry, such as an electrically gated bilayer graphene, the momentum-space Berry curvature $\Omega$ carries opposite sign in the K and K' valleys. A sign reversal of $\Omega$ along an internal boundary of the sheet gives rise to counter-propagating one-dimensional conducting modes encoded with opposite valley indices. These metallic states are topologically protected against backscattering in the absence of valley-mixing scattering, and thus can carry current ballistically. In bilayer graphene, the reversal of $\Omega$ can occur at the domain wall of AB and BA stacked domains, or at the line junction of two oppositely gated regions. The latter approach can provide a scalable platform to implement valleytronic operations such as valves and waveguides, but is technically challenging to realize. Here we fabricate a dual-split-gate structure in bilayer graphene and demonstrate transport evidence of the predicted metallic states. They possess a mean free path of up to a few hundred nanometers in the absence of a magnet field. The application of perpendicular magnetic field suppresses backscattering significantly and enables a 400-nanometer-long junction to exhibit conductance close to the ballistic limit of 4 $e^2/h$ at 8 Tesla. Our experiment paves the path to the realization of gate-controlled ballistic valley transport and the development of valleytronic applications in atomically thin materials.

Electrically Tunable Magnetoconductance of Close-Packed CVD Bilayer Graphene Layer Stacking Walls

Signature of multilayer graphene strain-controlled domain walls in quantum Hall effect

Topological Valley Transport at Bilayer Graphene Domain Walls

Large-area, Periodic, and Tunable Intrinsic Pseudo-Magnetic Fields in Low-Angle Twisted Bilayer Graphene

Gate-controlled topological conducting channels in bilayer graphene

Quantum Valley and Sub-valley Hall Effect in the Large Angle Twisted Bilayer Graphene

Strain-induced Enhanced Interlayer Coupling, Landau Quantizations, and Valley Polarization in Twisted Graphene Bilayer

Soliton-Dependent Electronic Transport across Bilayer Graphene Domain Wall

Dynamic topological domain walls driven by lithium intercalation in graphene

Formation of Topological Domain Walls and Quantum Transport Properties of Zero-Line Modes in Commensurate Bilayer Graphene Systems

Gate Tuning from Exciton Superfluid to Quantum Anomalous Hall in Van Der Waals Heterobilayer

Tunable and giant valley-selective Hall effect in gapped bilayer graphene

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

A Study of Vertical Transport Through Graphene Toward Control of Quantum Tunneling

Tunneling Spectroscopy of Quantum Hall States in Bilayer Graphene p-n Junctions

Mechanical control over valley magnetotransport in strained graphene

Manipulation of Domain-Wall Solitons in Bi- and Trilayer Graphene

Valley-dependent Bilayer Circuit Networks

Transport through a network of topological channels in twisted bilayer graphene

Controlling the layer localization of gapless states in bilayer graphene with a gate voltage

Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN4