Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures
Xikui Ma,Yingcai Fan,Weifeng Li,Yangyang Li,Xiangdong Liu,Xian Zhao,Mingwen Zhao
DOI: https://doi.org/10.1039/d3nr03086e
IF: 6.7
2023-10-27
Nanoscale
Abstract:Spontaneous valley polarization, resulting from the magnetic proximity effect, holds tremendous potential for information processing and storage. This effect is highly sensitive to the interfacial electronic properties, encompassing both charge transitions and spin configurations. In this study, we propose the manipulation of valley splitting by leveraging the tunable magnetic proximity effect through sliding an inversion-symmetric antiferromagnetic (AFM-I) monolayer within TMDs/AFM-I/TMDs heterostructures. The presence of the antiferromagnetic monolayer enhances the robustness of the magnetic order during interlayer sliding. Notably, we demonstrate that the polarized stacking of the heterostructures enables the generation of intrinsic out-of-plane and in-plane electric polarization. Intriguingly, interlayer sliding not only reverses the out-of-plane and in-plane electric polarization but also alters the layer-resolved valley splitting, thereby contributing to the emergence of anomalous valley Hall effect and layer Hall effect. In addition, the manipulation of valleys remains consistent with both the valley optical selection rules and the intra/interlayer emission energy, which are contingent upon the interlayer sliding. The findings of this work hold promise for potential applications in the field of valleytronics.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry