Abstract:A two-dimensional electron system placed in a magnetic field develops Landau levels, where strong Coulomb interactions lead to the appearance of many-body correlated ground states. Quantum numbers similar to the electron spin enable the understanding and control of complex ground state order and collective excitations. Owing to its spin, valley and orbital degrees of freedom, Bernal-stacked bilayer graphene offers a rich platform to pursue correlated phenomena in two dimensions. In this work, we fabricate dual-gated Bernal-stacked bilayer graphene devices and demonstrate unprecedented fine control over its valley isospin degrees of freedom using a perpendicular electric field. Higher sample quality enables us to probe regimes obscured by disorder in previous studies. We present evidence for a new even-denominator fractional quantum Hall state at filling factor {\nu} = 5/2. The 5/2 state is found to be spontaneously valley polarized in the limit of vanishing valley Zeeman splitting, consistent with a theoretical prediction made regarding the spin polarization of the Moore-Read state. In the vicinity of the even-denominator fractional quantum Hall states, we observe the appearance of the predicted Levin-Halperin daughter states of the Moore-Read Pfaffian wave function at {\nu}= 3/2, 7/2, and -1/2 and of the anti-Pfaffian at {\nu}= 5/2. These observations suggest the breaking of particle-hole symmetry in bilayer graphene. We construct a comprehensive valley polarization phase diagram for the Jain sequence fractional states surrounding filling factor 3/2. These results are well explained by a two-component composite fermion model, further demonstrating the SU(2) nature of the valley isospin in bilayer graphene. Our experiment paves the path for future efforts of manipulating the valley isospin in bilayer graphene to engineer exotic topological orders and quantum information processes.

Quantum Valley and Sub-valley Hall Effect in the Large Angle Twisted Bilayer Graphene

Topological Valley Transport at Bilayer Graphene Domain Walls

Concepts of super-valley electron and twist induced quantum super-valley Hall effect

Bulk valley transport and Berry curvature spreading at the edge of flat bands

In-plane Chiral Tunneling and Out-of-plane Valley-polarized Quantum Tunneling in Twisted Graphene Trilayer

Large-area, Periodic, and Tunable Intrinsic Pseudo-Magnetic Fields in Low-Angle Twisted Bilayer Graphene

Valley Hall Effect in Two-Dimensional Hexagonal Lattices

Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN4

Quantum valley Hall states in low-buckled counterparts of graphene bilayer

Spin-orbit coupling-enhanced valley ordering of malleable bands in twisted bilayer graphene on WSe2

Electrically Tunable Magnetoconductance of Close-Packed CVD Bilayer Graphene Layer Stacking Walls

Strain-induced Enhanced Interlayer Coupling, Landau Quantizations, and Valley Polarization in Twisted Graphene Bilayer

Quantum Manipulation of Valleys in Bilayer Graphene: Theory and Applications

Valley-chiral Quantum Hall State in Graphene Superlattice Structure

Valley protected one-dimensional states in small-angle twisted bilayer graphene

Quantum Valley Hall effect without Berry curvature

Tunable and giant valley-selective Hall effect in gapped bilayer graphene

Valley Isospin Controlled Fractional Quantum Hall States in Bilayer Graphene

Formation of Topological Domain Walls and Quantum Transport Properties of Zero-Line Modes in Commensurate Bilayer Graphene Systems

Domain wall competition in the Chern insulating regime of twisted bilayer graphene

Valley-filtered Edge States and Quantum Valley Hall Effect in Gated Bilayer Graphene.