Abstract:The past decade has seen rapid growth in the research area of graphene and its application to novel electronics. With Moore's law beginning to plateau, the need for post-silicon technology in industry is becoming more apparent. Moreover, existing technology is insufficient for implementing terahertz detectors and receivers, which are required for a number of applications including medical imaging and security scanning. Graphene is considered to be a key potential candidate for replacing silicon in existing CMOS technology as well as realizing field effect transistors for terahertz detection, due to its remarkable electronic properties, with observed electronic mobilities reaching up to $2 \times 10^5$ cm$^2$ V$^{-1}$ s$^{-1}$ in suspended graphene samples. This report reviews the physics and electronic properties of graphene in the context of graphene transistor implementations. Common techniques used to synthesize graphene, such as mechanical exfoliation, chemical vapor deposition, and epitaxial growth are reviewed and compared. One of the challenges associated with realizing graphene transistors is that graphene is semimetallic, with a zero bandgap, which is troublesome in the context of digital electronics applications. Thus, the report also reviews different ways of opening a bandgap in graphene by using bilayer graphene and graphene nanoribbons. The basic operation of a conventional field effect transistor is explained and key figures of merit used in the literature are extracted. Finally, a review of some examples of state-of-the-art graphene field effect transistors is presented, with particular focus on monolayer graphene, bilayer graphene, and graphene nanoribbons.

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

Highly Tunable Carrier Tunneling in Vertical Graphene-WS2-Graphene Van Der Waals Heterostructures.

Bilayer Insulator Tunnel Barriers for Graphene-Based Vertical Hot-electron Transistors

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Enhanced On-state Current in Barrier-free Carbon Heterojunction Tunneling Field-effect Transistor

Computational Study of Graphene-Based Vertical Field Effect Transistor

A Vertical Silicon-Graphene-germanium Transistor.

Reconfigurable vertical field-effect transistor based on graphene/MoTe2/graphite heterostructure

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Vertical Thin Film Transistor Based on Conductivity Modulation of Graphene Electrode by Micro‐Hole Patterning

Tuning On-Off Current Ratio and Field-Effect Mobility in A Mos2-Graphene Heterostructure Via Schottky Barrier Modulation

First-principles Simulations of Graphene/Transition-metal-Dichalcogenides/Graphene Field-Effect Transistor

Experimental realization of single electron tunneling diode based on vertical graphene two-barrier junction

Exotic Tunneling Resistance in Graphene/topological Insulator Vertical Junction

Atomically thin boron nitride: a tunnelling barrier for graphene devices

Graphene Field Effect Transistors: A Review

Monolayer graphene/hexagonal boron nitride heterostructure