Abstract:Advanced Functional MaterialsVolume 29, Issue 17 1970113 FrontispieceFree Access Bipolar Junction Transistors: Van der Waals Bipolar Junction Transistor Using Vertically Stacked Two-Dimensional Atomic Crystals (Adv. Funct. Mater. 17/2019) Liwei Liu, Liwei Liu State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorNingsheng Xu, Ningsheng Xu State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorYu Zhang, Yu Zhang State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorPeng Zhao, Peng Zhao State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorHuanjun Chen, Huanjun Chen State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorShaozhi Deng, Shaozhi Deng State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this author Liwei Liu, Liwei Liu State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorNingsheng Xu, Ningsheng Xu State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorYu Zhang, Yu Zhang State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorPeng Zhao, Peng Zhao State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorHuanjun Chen, Huanjun Chen State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this authorShaozhi Deng, Shaozhi Deng State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275 ChinaSearch for more papers by this author First published: 17 April 2019 https://doi.org/10.1002/adfm.201970113AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Graphical Abstract In article number 1807893, Shaozhi Deng and co-workers present a study of Van der Waals bipolar junction transistors based on vertically stacked 2D materials (V2D-BJT), which use a MoS2/WSe2/MoS2 heterostructure in an n-p-n configuration (represented by the image). The V2D-BJT shows excellent characteristics of a low power amplifier, and excellent gas sensing performance with fast response and recovery times. Volume29, Issue17April 25, 20191970113 RelatedInformation

Vertical Transistors: Analog Circuit Applications Based on Ambipolar Graphene/MoTe2 Vertical Transistors (Adv. Electron. Mater. 3/2018)

Analog Circuit Applications Based on Ambipolar Graphene/MoTe2 Vertical Transistors

Reconfigurable vertical field-effect transistor based on graphene/MoTe2/graphite heterostructure

Complementary Two-Dimensional Vertical Transistors through Lamination with a van der Waals Metal

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

Vertical Thin Film Transistor Based on Conductivity Modulation of Graphene Electrode by Micro‐Hole Patterning

Ambipolar Mote2 Transistors and Their Applications in Logic Circuits

Bipolar Junction Transistors: Van Der Waals Bipolar Junction Transistor Using Vertically Stacked Two‐Dimensional Atomic Crystals (adv. Funct. Mater. 17/2019)

Graphene-based nonvolatile terahertz switch with asymmetric electrodes

Quantum Interference Mediated Vertical Molecular Tunneling Transistors

Tribotronic Vertical Field‐Effect Transistor Based on van der Waals Heterostructures

All-Metallic Vertical Transistors Based on Stacked Dirac Materials

Graphene-based ambipolar electronics for radio frequency applications

MXene based saturation organic vertical photoelectric transistors with low subthreshold swing

Triple-Mode Single-Transistor Graphene Amplifier and Its Applications

High-performance controllable ambipolar infrared phototransistors based on graphene-quantum dot hybrid

Introduction to Graphene Electronics -- A New Era of Digital Transistors and Devices

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures.

Ambipolar Barristors for Reconfigurable Logic Circuits

Graphene-Based Micro-Emitters and Vacuum Transistors

Vertical graphene-base hot-electron transistor.