Abstract:Hot-carrier transistors are a class of devices that leverage the excess kinetic energy of carriers. Unlike regular transistors, which rely on steady-state carrier transport, hot-carrier transistors modulate carriers to high-energy states, resulting in enhanced device speed and functionality. These characteristics are essential for applications that demand rapid switching and high-frequency operations, such as advanced telecommunications and cutting-edge computing technologies1-5. However, the traditional mechanisms of hot-carrier generation are either carrier injection6-11 or acceleration12,13, which limit device performance in terms of power consumption and negative differential resistance14-17. Mixed-dimensional devices, which combine bulk and low-dimensional materials, can offer different mechanisms for hot-carrier generation by leveraging the diverse potential barriers formed by energy-band combinations18-21. Here we report a hot-emitter transistor based on double mixed-dimensional graphene/germanium Schottky junctions that uses stimulated emission of heated carriers to achieve a subthreshold swing lower than 1 millivolt per decade beyond the Boltzmann limit and a negative differential resistance with a peak-to-valley current ratio greater than 100 at room temperature. Multi-valued logic with a high inverter gain and reconfigurable logic states are further demonstrated. This work reports a multifunctional hot-emitter transistor with significant potential for low-power and negative-differential-resistance applications, marking a promising advancement for the post-Moore era.

GaN/Gr (2D)/Si (3D) Combined High-Performance Hot Electron Transistors

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Vertical graphene-base hot-electron transistor.

High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier

A hot-emitter transistor based on stimulated emission of heated carriers

High-Current Gain Two-Dimensional MoS<sub>2</sub>-Base Hot-Electron Transistors

Approaching the Collection Limit in Hot Electron Transistors with Ambipolar Hot Carrier Transport

High‐voltage AlInN/GaN Superjunction Fin‐gate High Electron Mobility Transistor for Power‐switching Application

High-current Gain Two-dimensional MoS2-base Hot-electron Transistors.

AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal–Oxide–Semiconductor-Compatible Non-Gold Metal Stack

A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure

A Vertical Silicon-Graphene-germanium Transistor.

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

Theoretical Investigation of High-Voltage Self-Charge-Balanced Superjunction AlGaN/GaN Heterojunction Field Effect Transistors with Nanoscale Polarization-Doped AlGaN Layer

Numerical Simulation of Two-Dimensional Electron Gas Characteristics of a Novel (inxal1−xn/aln)mqws/gan High Electron Mobility Transistor

Normally-off AlN/β-Ga2O3 Field-Effect Transistors Using Polarization-Induced Doping

GaN-Based Double-Heterojunction Bipolar Transistors With a Composition Graded p-InGaN Base

All-Two-Dimensional-Material Hot Electron Transistor

Study on a p-GaN HEMT with composite passivation and composite barrier layers