Abstract:The use of a foreign metallic cold source (CS) has recently been proposed as a promising approach toward the steep‐slope field‐effect‐transistor (FET). In addition to the selection of source material with desired density of states–energy relation (D(E)), engineering the source:channel interface for gate‐tunable channel‐barrier is crucial to CS‐FETs. However, conventional metal:semiconductor (MS) interfaces generally suffer from strong Fermi‐level pinning due to the inevitable chemical disorder and defect‐induced gap states, precluding the gate tunability of the barriers. By comprehensive materials and device modeling at the atomic scale, it is reported that 2D van der Waals (vdW) MS interfaces, with their atomic sharpness and cleanness, can be considered as general ingredients for CS‐FETs. As test cases, InSe‐based n‐type FETs are studied. It is found that graphene can be spontaneously p‐type doped along with slightly opened bandgap around the Dirac‐point by interfacing with InSe, resulting in superexponentially decaying hot carrier density with increasing n‐type channel‐barrier. Moreover, the D(E) relations suggest that 2D transition‐metal dichalcogenides and 2D transition‐metal carbides are a rich library of CS materials. Graphene, Cd3C2, T‐VTe2, H‐VTe2, and H‐TaTe2 CSs lead to subthreshold swing below 60 mV dec−1. This work broadens the application potentials of 2D vdW MS heterostructures and serves as a springboard for more studies on low‐power electronics based on 2D materials.

All-Two-Dimensional-Material Hot Electron Transistor

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Vertical graphene-base hot-electron transistor.

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High-current Gain Two-dimensional MoS2-base Hot-electron Transistors.

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Two-Dimensional Cold Electron Transport for Steep-Slope Transistors

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Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

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Free Electron Emission from Two-dimensional Material Heterostructures

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Efficient hot-electron extraction in two-dimensional semiconductor heterostructures by ultrafast resonant transfer

Vertical WS2/SnS2 Van Der Waals Heterostructure for Tunneling Transistors.

Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

Hot Carrier Nanowire Transistors at the Ballistic Limit