Free Electron Emission from Two-dimensional Material Heterostructures

Zhexuan Wang,Fang Liu,Kaiyu Cui,Xue Feng,Wei Zhang,Yidong Huang

DOI: https://doi.org/10.1364/cleo_at.2024.jth2a.8

2024-01-01

Abstract:We achieved free electron emission based on planar-type two-dimensional material heterostructures experimentally. By applying electric voltage of only 20V, maximum emission current density over 7mA/cm2 and steady operation for hours is realized.

What problem does this paper attempt to address?

Low-Voltage Electron Emission by Graphene-hBN-graphene Heterostructure

Zhexuan Wang,Fang Liu,Kaiyu Cui,Xue Feng,Wei Zhang,Yidong Huang

2024-06-22

Abstract:Scanning Electron Microscopes (SEM) with low energy electron sources (accelerating voltage of less than 1000V) have important application requirements in many application scenarios. Tunneling junction can potentially achieve low-voltage and planar-type electron sources with good emission current density. However, further lower the extracting voltage while ensure the emission current density remains challenging. In this paper, we report a low-voltage planar-type electron source based on graphene-hBN-graphene heterostructures (GBGH) under a really low out-plane extracting voltage. The external electric field strength applied to the electron sources is only 4 times 10^4V/m and the accelerating voltage as low as 20V is realized. Steady electron emission of over 1nA and operating duration of several hours is observed from the GBGH with size of 59.29um^2 in our experiments, and thus the maximum emission current density reaches 7mA/cm^2. Great electrical contacts, extremely low thickness, and excellent layer properties of two-dimensional (2D) materials lead to easy-fabrication and miniature on-chip electron sources, which would significantly contribute to the development of next-generation free electron devices.

Applied Physics,Mesoscale and Nanoscale Physics
Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Oliver Mey,Franziska Wall,Lorenz Maximilian Schneider,Darius Guender,Frederik Walla,Amin Soltani,Hartmut Roskos,Ni Yao,Peng Qing,Wei Fang,Arash Rahimi-Iman

DOI: https://doi.org/10.1021/acsnano.8b09659

IF: 17.1

2019-01-01

ACS Nano

Abstract:Light-matter interactions with two-dimensional materials gained significant attention in recent years, leading to the reporting of weak and strong coupling regimes and effective nanolaser operation with various structures. Particularly, future applications involving monolayer materials in waveguide-coupled on-chip-integrated circuitry and valleytronic nanophotonics require controlling, directing, and optimizing photoluminescence. In this context, photoluminescence enhancement from monolayer transition-metal dichalcogenides on patterned semiconducting substrates becomes attractive. It is demonstrated in our work using focused-ion-beam-etched GaP and monolayer WS2 suspended on hexagonal boron nitride buffer sheets. We present an optical microcavity approach capable of efficient in-plane and out-of-plane confinement of light, which results in a WS2 photoluminescence enhancement by a factor of 10 compared to that of the unstructured substrate at room temperature. The key concept is the combination of interference effects in both the horizontal direction using a bull's-eye-shaped circular Bragg grating and in the vertical direction by means of a multiple-reflection model with optimized etch depth of circular air-GaP structures for maximum constructive interference effects of the applied pump and expected emission light.
Hot electron field emission via individually transistor-ballasted carbon nanotube arrays.

Chi Li,Yan Zhang,Matthew T Cole,Sai G Shivareddy,Jon S Barnard,Wei Lei,Baoping Wang,Didier Pribat,Gehan A J Amaratunga,William I Milne

DOI: https://doi.org/10.1021/nn300111t

IF: 17.1

2012-01-01

ACS Nano

Abstract:We present electronically controlled field emission characteristics of arrays of individually ballasted carbon nanotubes synthesized by plasma-enhanced chemical vapor deposition on silicon-on-insulator substrates. By adjusting the source-drain potential we have demonstrated the ability to controllable limit the emission current density by more than 1 order of magnitude. Dynamic control over both the turn-on electric field and field enhancement factor have been noted. A hot electron model is presented. The ballasted nanotubes are populated with hot electrons due to the highly crystalline Si channel and the high local electric field at the nanotube base. This positively shifts the Fermi level and results in a broad energy distribution about this mean, compared to the narrow spread, lower energy thermalized electron population in standard metallic emitters. The proposed vertically aligned carbon nanotube field-emitting electron source offers a viable platform for X-ray emitters and displays applications that require accurate and highly stable control over the emission characteristics.
All-Two-Dimensional-Material Hot Electron Transistor

Hongwei Guo,Lingfei Li,Wei Liu,Yiwei Sun,Lei Xu,Ayaz Ali,Yuan Liu,Chihi Wu,Khurram Shehzad,Wen-Yan Yin,Yang Xu

DOI: https://doi.org/10.1109/led.2018.2810272

IF: 4.8157

2018-01-01

IEEE Electron Device Letters

Abstract:In this letter, we report the first experimental realization of purely two-dimensional-material-based hot electron transistor (2D-HET) by the van der Waals stacking. We used ultra-thin graphene as the base, and WSe2 or h-BN as the emitter-base or base-collector barriers. We quantitatively determined that the transport mechanism through the 2D barrier changes from the Fowler-Nordheim tunneling to the thermionic emission with the increase of temperature. In our 2D-HET, the dangling-bond-free 2D materials provide atomically sharp interfaces to suppress the hot electron scattering, which along with the optimization of the barriers, gives a relatively large collection efficiency of 99.95% and a relatively high current density of 233 A/cm(2) in the family of graphene-base HETs.
Injection-free multiwavelength electroluminescence devices based on monolayer semiconductors driven by an alternating field

Jiabin Feng,Yongzhuo Li,Jianxing Zhang,Yuqian Tang,Hao Sun,Lin Gan,Cun-Zheng Ning

DOI: https://doi.org/10.1126/sciadv.abl5134

IF: 13.6

2022-02-04

Science Advances

Abstract:Two-dimensional (2D) semiconductors have emerged as promising candidates for various optoelectronic devices especially electroluminescent (EL) devices. However, progress has been hampered by many challenges including metal contacts and injection, transport, and confinement of carriers due to small sizes of materials and the lack of proper double heterostructures. Here, we propose and demonstrate an alternative approach to conventional current injection devices. We take advantage of large exciton binding energies in 2D materials using impact generation of excitons through an alternating electric field, without requiring metal contacts to 2D materials. The conversion efficiency, defined as the ratio of the emitted photons to the preexisting carriers, can reach 16% at room temperature. In addition, we demonstrate the first multiwavelength 2D EL device, simultaneously operating at three wavelengths from red to near-infrared. Our approach provides an alternative to conventional current-based devices and could unleash the great potential of 2D materials for EL devices.

multidisciplinary sciences
Electrical Control of Excitonic Oscillator Strength and Spatial Distribution in a Monolayer Semiconductor

Yanming Wang,Junrong Zhang,Tianhua Ren,Meng Xia,Long Fang,Xiangyi Wang,Xingwang Zhang,Kai Zhang,Junyong Wang

DOI: https://doi.org/10.1007/s12274-024-6762-7

IF: 9.9

2024-01-01

Nano Research

Abstract:Electrical modulation of luminescence is significant to modern light-emitting devices. Monolayer transition metal dichalcogenides are emerging direct-bandgap luminescent materials with unique excitonic properties, and the multiple exciton complexes provide new opportunities to modulate the property of luminescence in atomically thin semiconductors. Here, we report an electrical control of exciton emission in the oscillator strength and spatial distribution of excitons in a monolayer WS2. Effective modulation of excitonic emission intensity with a degree of modulation of 92
Unidirectional Doubly Enhanced MoS2 Emission Via Photonic Fano Resonances

Xingwang Zhang,Shinhyuk Choi,Dake Wang,Carl H. Naylor,A. T. Charlie Johnson,Ertugrul Cubukcu

DOI: https://doi.org/10.1021/acs.nanolett.7b02777

IF: 10.8

2017-01-01

Nano Letters

Abstract:Atomically thin transition metal dichalcogenides like MoS2 monolayers exhibit unique luminescent properties. However, weak quantum yield and low light absorption hinder their practical applications in two-dimensional light emitting devices. Here, we report 1300 times enhancement in photoluminescence emission from a MoS2 monolayer via simultaneous Fano resonances in a dielectric photonic crystal. The spatially extended double Fano resonance scheme allows resonant enhancement of both the MoS2 absorption and emission. We also achieve unidirectional emission within a narrow divergence angle of 5° by engineering the Fano resonance angular dispersion. Our approach provides a new platform for efficient light sources with high directionality based on emerging two-dimensional materials.
Field Electron Emission Characteristics And Physical Mechanism Of Individual Single-Layer Graphene

Zhiming Xiao,Juncong She,Shaozhi Deng,Zikang Tang,Zhibing Li,Jianming Lu,Ningsheng Xu

DOI: https://doi.org/10.1021/nn101719r

IF: 17.1

2010-01-01

ACS Nano

Abstract:Due to its difficulty, experimental measurement of field emission from a single layer graphene has not been,reported;although field emission from a two dimensional (2D) regime has been an attractive topic. The open surface and sharp edge of graphene are beneficial for electron emission A 2D, geometrical effect, such as massless Dirac fermion, can lead to new mechanism in field emission Here, we report our findings from in situ field electron emission Characterization on an individual singe-layer graphene and the understanding of the related mechanism The measurement of field emission from the edges was done using a microanode probe equipped in a scanning electron microscope We show that repeatable stable field emission current can be obtained after a careful conditioning process This enables us to examine experimentally the typical features of the field emission from a 2D regime We plot current versus applied field data, respectively, in In(I/E-3/2) similar to 1/E and In(I/E-3)similar to 1/E-2 coordinates, which have recently been proposed for field emission trim graphene in high and low field regimes It is observed that the plots all exhibit an upward bending feature, revealing that the field emission processes undergo from a low to high field transition We discuss with theoretical analysis the physical mechanism responsible for the new phenomena
Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Peiliang Chen,Xiangyang Ma,Dongsheng Li,Yuanyuan Zhang,Deren Yang

DOI: https://doi.org/10.1063/1.3081109

IF: 4

2009-01-01

Applied Physics Letters

Abstract:We report bidirectional direct-current electroluminescence (EL) from i-MgxZn1−xO/n-ZnO/SiOx double-barrier heterostructures on Si. When the heterostructure-based device is forward biased with negative voltage applied on Si, ultraviolet (UV) emission is more intense than visible emissions. The visible emissions appear only at sufficiently high currents. As the device is reverse biased, the visible emissions dominate the EL at low currents. However, they are gradually overridden by the UV emission with increasing current. The EL mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.
New Pathway for Hot Electron Relaxation in Two-Dimensional Heterostructures.

Jin Zhang,Hao Hong,Jia Zhang,Huixia Fu,Peiwei You,Johannes Lischner,Kaihui Liu,Efthimios Kaxiras,Sheng Meng

DOI: https://doi.org/10.1021/acs.nanolett.8b03005

IF: 10.8

2018-01-01

Nano Letters

Abstract:Two-dimensional (2D) heterostructures composed of transition-metal dichalcogenide atomic layers are the new frontier for novel optoelectronic and photovoltaic device applications. Some key properties that make these materials appealing, yet are not well understood, are ultrafast hole/electron dynamics, interlayer energy transfer and the formation of interlayer hot excitons. Here, we study photoexcited electron/hole dynamics in a representative heterostructure, the MoS2/WSe2 interface, which exhibits type II band alignment. Employing time-dependent density functional theory in the time domain, we observe ultrafast charge dynamics with lifetimes of tens to hundreds of femtoseconds. Most importantly, we report the discovery of an interfacial pathway in 2D heterostructures for the relaxation of photoexcited hot electrons through interlayer hopping, which is significantly faster than intralayer relaxation. This finding is of particular importance for understanding many experimentally observed photoinduced processes, including charge and energy transfer at an ultrafast time scale (<1 ps).
Field Emission of One-Dimensional Micro- and Nanostructures of Zinc Oxide

Y. H. Yang,B. Wang,N. S. Xu,G. W. Yang

DOI: https://doi.org/10.1063/1.2234838

IF: 4

2006-01-01

Applied Physics Letters

Abstract:A variety of one-dimensional (1D) micro- and nanostructures of zinc oxide (ZnO) were self-assembled on amorphous carbons using thermal chemical vapor transport and condensation without any metal catalysts. The low turn-on electronic field and the higher current density were achieved on these 1D ZnO micro- and nanostructural emitters. It was found that the geometry of the micro- and nanostructural emitters plays a crucial role in the field emission of ZnO.
Light Generation and Harvesting in a Van der Waals Heterostructure

Oriol Lopez-Sanchez,Esther Alarcon Llado,Volodymyr Koman,Anna Fontcuberta i Morral,Aleksandra Radenovic,Andras Kis

DOI: https://doi.org/10.1021/nn500480u

2014-03-12

Abstract:Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of semiconducting transition metal dichalcogenides MoS2 or WSe2 have been proposed as promising channel materials for field-effect transistors (FETs). Their high mechanical flexibility, stability and quality coupled with potentially inexpensive production methods offer potential advantages compared to organic and crystalline bulk semiconductors. Due to quantum mechanical confinement, the band gap in monolayer MoS2 is direct in nature, leading to a strong interaction with light that can be exploited for building phototransistors and ultrasensitive photodetectors. Here, we report on the realization of light-emitting diodes based on vertical heterojunctions composed of n-type monolayer MoS2 and p-type silicon. Careful interface engineering allows us to realize diodes showing rectification and light emission from the entire surface of the heterojunction. Electroluminescence spectra show clear signs of direct excitons related to the optical transitions between the conduction and valence bands. Our pn diodes can also operate as solar cells, with typical external quantum efficiency exceeding 4%. Our work opens up the way to more sophisticated optoelectronic devices such as lasers and heterostructure solar cells based on hybrids of two-dimensional (2D) semiconductors and silicon.

Mesoscale and Nanoscale Physics
Efficient cathodoluminescence of monolayer transitional metal dichalcogenides in a van der Waals heterostructure

Shoujun Zheng,Jinkyu So,Fucai Liu,Zheng Liu,Nikolay Zheludev,Hong Jin Fan

DOI: https://doi.org/10.1021/acs.nanolett.7b03585

2017-06-28

Abstract:Monolayer two-dimensional transitional metal dichalcogenides, such as MoS2, WS2 and WSe2, are direct band gap semiconductors with large exciton binding energy. They attract growing attentions for opto-electronic applications including solar cells, photo-detectors, light-emitting diodes and photo-transistors, capacitive energy storage, photodynamic cancer therapy and sensing on flexible platforms. While light-induced luminescence has been widely studied, luminescence induced by injection of free electrons could promise another important applications of these new materials. However, cathodoluminescence is inefficient due to the low cross-section of the electron-hole creating process in the monolayers. Here for the first time we show that cathodoluminescence of monolayer chalcogenide semiconductors can be evidently observed in a van der Waals heterostructure when the monolayer semiconductor is sandwiched between layers of hexagonal boron nitride (hBN) with higher energy gap. The emission intensity shows a strong dependence on the thicknesses of surrounding layers and the enhancement factor is more than 1000 folds. Strain-induced exciton peak shift in the suspended heterostructure is also investigated by the cathodoluminescence spectroscopy. Our results demonstrate that MoS2, WS2 and WSe2 could be promising cathodoluminescent materials for applications in single-photon emitters, high-energy particle detectors, transmission electron microscope displays, surface-conduction electron-emitter and field emission display technologies.

Mesoscale and Nanoscale Physics,Applied Physics
Highly Stable Field Emission from a Tungsten Diselenide Monolayer on Zinc Oxide Nanowire by Geometrically Modulating Hot Electrons

Yicong Chen,Liwei Liu,Keshuang Zheng,Juncong She,Shaozhi Deng,Ningsheng Xu,Jun Chen

DOI: https://doi.org/10.1002/aelm.201900128

IF: 6.2

2019-01-01

Advanced Electronic Materials

Abstract:Compared with traditional thermal electron sources, field‐emission electron sources have many advantages, such as high brightness, coherence, and suitability for miniaturization. However, their instability has prevented their widespread use. Stable field emission from a hybrid structure with a tungsten diselenide (WSe2) monolayer on zinc oxide (ZnO) nanowires is achieved by geometrically modulating the WSe2 curvature. It is found that an emitter with a lower WSe2 curvature induces hotter electrons during field emission, which results in a low turn‐on field and high stability. Considering the similarity of 2D materials, a general approach for obtaining a highly stable field emitter using a 2D–1D hybrid structure is provided.
Local Electron Field Emission Study of Two-dimensional Carbon

Ying Wang,Yumeng Yang,Zizheng Zhao,Chi Zhang,Yihong Wu

DOI: https://doi.org/10.48550/arXiv.1307.3814

2013-07-15

Mesoscale and Nanoscale Physics

Abstract:A systematic field-emission study has been carried out on different types of two-dimensional carbons in ultrahigh vacuum with the cathode-anode distance ranging from near-contact to about 124 nm. An analytical model has been developed to explain the increase of field enhancement factor with the cathode-anode distance. Good agreement has been achieved between the calculation results and experimental data, including those reported in literature. The work provides useful insights into the characteristics of field emission from two-dimensional carbon.
Non-Equilibrium First-Order Exciton Mott Transition at Monolayer Lateral Heterojunctions Visualized by Ultrafast Microscopy

Long Yuan,Biyuan Zheng,Qiuchen Zhao,Roman Kempt,Thomas Brumme,Agnieszka Beata Kuc,Chao Ma,Shibin Deng,Anlian Pan,Libai Huang

DOI: https://doi.org/10.48550/arXiv.2111.07887

2021-11-15

Mesoscale and Nanoscale Physics

Abstract:Atomically precise lateral heterojunctions based on transition metal dichalcogenides provide a new platform for exploring exciton Mott transition in one-dimension. To investigate the intrinsically non-equilibrium Mott transition, we employed ultrafast microscopy with ~ 200 fs temporal resolution to image the transport of different exciton phases in a type II WSe2-WS1.16Se0.84 lateral heterostructure. These measurements visualized the extremely rapid expansion of a highly non-equilibrium electron-hole (e-h) plasma phase with a Fermi velocity up to 3.2*10^6 cm*s-1. An abrupt first-order exciton Mott transition at a density of ~ 5*10^12 cm-2 at room temperature was revealed by ultrafast microscopy, which could be disguised as a continuous transition in conventional steady-state measurements. These results point to exciting new opportunities for designing atomically thin lateral heterojunctions as novel highways of excitons and collective e-h plasma for high-speed electronic applications.
Manipulating Charge and Energy Transfer Between 2D Atomic Layers Via Heterostructure Engineering

Xue Liu,Jiajie Pei,Zehua Hu,Weijie Zhao,Sheng Liu,Mohamed-Raouf Amara,Kenji Watanabe,Takashi Taniguchi,Han Zhang,Qihua Xiong

DOI: https://doi.org/10.1021/acs.nanolett.0c01722

IF: 10.8

2020-01-01

Nano Letters

Abstract:Two-dimensional (2D) van der Waals heterostructures have attracted enormous research interests due to their emergent electrical and optical properties. The comprehensive understanding and efficient control of interlayer couplings in such devices are crucial for realizing their functionalities, as well as for improving their performance. Here, we report a successful manipulation of interlayer charge transfer between 2D materials by varying different stacking layers consisting of graphene, hexagonal boron nitride, and tungsten disulfide. Under visible-light excitation, despite being separated by few-layer boron nitride, the graphene and tungsten disulfide exhibit clear modulation of their doping level, i.e., a change of the Fermi level in graphene as large as 120 meV and a net electron accumulation in WS2. By using a combination of micro-Raman and photoluminescence spectroscopy, we demonstrate that the modulation is originated from simultaneous manipulation of charge and/or energy transfer between each of the two adjacent layers.
Cold Cathodes with Two-Dimensional van der Waals Materials

Yicong Chen,Jun Chen,Zhibing Li

DOI: https://doi.org/10.3390/nano13172437

IF: 5.3

2023-08-28

Nanomaterials

Abstract:Two-dimensional van der Waals materials could be used as electron emitters alone or stacked in a heterostructure. Many significant phenomena of two-dimensional van der Waals field emitters have been observed and predicted since the landmark discovery of graphene. Due to the wide variety of heterostructures that integrate an atomic monolayer or multilayers with insulator nanofilms or metallic cathodes by van der Waals force, the diversity of van der Waals materials is large to be chosen from, which are appealing for further investigation. Until now, increasing the efficiency, stability, and uniformity in electron emission of cold cathodes with two-dimensional materials is still of interest in research. Some novel behaviors in electron emission, such as coherence and directionality, have been revealed by the theoretical study down to the atomic scale and could lead to innovative applications. Although intensive emission in the direction normal to two-dimensional emitters has been observed in experiments, the theoretical mechanism is still incomplete. In this paper, we will review some late progresses related to the cold cathodes with two-dimensional van der Waals materials, both in experiments and in the theoretical study, emphasizing the phenomena which are absent in the conventional cold cathodes. The review will cover the fabrication of several kinds of emitter structures for field emission applications, the state of the art of their field emission properties and the existing field emission model. In the end, some perspectives on their future research trend will also be given.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Room temperature large photoresponse in p-n heterojunction composed of WSe 2 and 2D electron gas at LaAlO 3 /KTaO 3 interface

Ju Li,Xiaowei Zhou,Yucheng Jiang,Run Zhao,Ju Gao,Jie Xing,Guozhen Liu,Jie Qiu

DOI: https://doi.org/10.1063/5.0076887

IF: 4

2021-12-13

Applied Physics Letters

Abstract:The heterostructures combining 2D layered material and two-dimensional electron gas (2DEG) at the surface or interfaces of complex oxides may exhibit abundant and interesting physical properties. In this paper, we report the development and photoelectrical properties of a p-n heterojunction composed of a p-type 2D layered material WSe2 and n-type 2DEG at the LaAlO3/KTaO3 interface. The WSe2 flake was first fabricated by mechanical exfoliation and then integrated with 2DEG at the LaAlO3/KTaO3 interface obtained using pulsed laser deposition. The WSe2/2DEG heterostructure shows good rectifying behavior with a low leakage current at room temperature. Additionally, compared with oxide 2DEG, the WSe2/2DEG heterostructure exhibits greatly enhanced visible-light photoresponse. The results imply that the 2D heterostructures based on disparate material systems can be realized and demonstrate potential applications in nanoscale electronics and optoelectronics, which are of great scientific and technological significances.

physics, applied
Low-voltage Injection-free Electroluminescence Device Based on a Monolayer MoSe2/WSe2 Lateral Heterostructure

Yutong Zhong,Hanyuan Ma,Qian Lv,Yongzhuo Li,Jiabin Feng,Chen Li,Jialu Xu,Chenxin Yu,Ruitao Lv,Cun-Zheng Ning

DOI: https://doi.org/10.1364/cleo_si.2024.sf2r.5

2024-01-01

Abstract:We demonstrate an injection-free electroluminescence device fabricated with a CVD-grown monolayer MoSe2/WSe2 lateral heterostructure. The device is based on impact generation of excitons through an alternating voltage as low as ±1 V at room temperature.

Free Electron Emission from Two-dimensional Material Heterostructures

Low-Voltage Electron Emission by Graphene-hBN-graphene Heterostructure

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Hot electron field emission via individually transistor-ballasted carbon nanotube arrays.

All-Two-Dimensional-Material Hot Electron Transistor

Injection-free multiwavelength electroluminescence devices based on monolayer semiconductors driven by an alternating field

Electrical Control of Excitonic Oscillator Strength and Spatial Distribution in a Monolayer Semiconductor

Unidirectional Doubly Enhanced MoS2 Emission Via Photonic Fano Resonances

Field Electron Emission Characteristics And Physical Mechanism Of Individual Single-Layer Graphene

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

New Pathway for Hot Electron Relaxation in Two-Dimensional Heterostructures.

Field Emission of One-Dimensional Micro- and Nanostructures of Zinc Oxide

Light Generation and Harvesting in a Van der Waals Heterostructure

Efficient cathodoluminescence of monolayer transitional metal dichalcogenides in a van der Waals heterostructure

Highly Stable Field Emission from a Tungsten Diselenide Monolayer on Zinc Oxide Nanowire by Geometrically Modulating Hot Electrons

Local Electron Field Emission Study of Two-dimensional Carbon

Non-Equilibrium First-Order Exciton Mott Transition at Monolayer Lateral Heterojunctions Visualized by Ultrafast Microscopy

Manipulating Charge and Energy Transfer Between 2D Atomic Layers Via Heterostructure Engineering

Cold Cathodes with Two-Dimensional van der Waals Materials

Room temperature large photoresponse in p-n heterojunction composed of WSe 2 and 2D electron gas at LaAlO 3 /KTaO 3 interface

Low-voltage Injection-free Electroluminescence Device Based on a Monolayer MoSe2/WSe2 Lateral Heterostructure