Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

Ultra-Strong Comprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics

Analyzing Gamma-Ray Irradiation Effects on Carbon Nanotube Top-Gated Field-Effect Transistors.

Carbon Nanotube Materials for Future Integrated Circuit Applications

Heavy Ion Displacement Damage Effect in Carbon Nanotube Field Effect Transistors

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Radiation-hardened and Repairable Integrated Circuits Based on Carbon Nanotube Transistors with Ion Gel Gates

Radiation-Hard and Repairable Complementary Metal-Oxide-Semiconductor Circuits Integrating N-Type Indium Oxide and P-Type Carbon Nanotube Field-Effect Transistors.

Radiation Effects and Radiation Hardness Solutions for Single-Walled Carbon Nanotube-Based Thin Film Transistors and Logic Devices

High‐Performance and Radiation‐Hard Carbon Nanotube Complementary Static Random‐Access Memory

Flexible Solid-Electrolyte-Gated-Dielectric Carbon Nanotube Thin Film Transistors and Integrated Circuits with the Recorded Radiation Tolerance and Reparability

Improving Carbon Nanotube-Based Radiofrequency Field-Effect Transistors by the Device Architecture and Doping Process.

Carbon nanotube (CNT) metal composites exhibit greatly reduced radiation damage

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Carbon Nanotube Electronics: Recent Advances

Robust ultrahigh electromagnetic interference shielding effectiveness based on engineered structures of carbon nanotube films

Carbon nanotube radio-frequency electronics

Carbon Based High Performance Doping-Free Nanoelectronic and Optoelectronic Devices

Radiation Effects in Printed Flexible Single-Walled Carbon Nanotube Thin-Film Transistors

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Ultralow‐power and radiation‐tolerant complementary metal‐oxide‐semiconductor electronics utilizing enhancement‐mode carbon nanotube transistors on paper substrates