Abstract:III-nitrides based high electron-mobility transistors (HEMTs) are well-known excellent candidates for high-power, radio-frequency (rf) and high-temperature applications. However, HEMTs have to face the essential issues of high gate leakage current and drain current collapse (gate-lag), which inevitably limits the device performances and reliability. Here, we fabricate an optimized AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT), by using HfZrOx (HZO) as a gate dielectric, that can improve the interfacial and transport properties. Compared to the conventional high permittivity (high-kappa) gate dielectric HfO2 which has attracted wide attention in recent years, the concentrations of interface traps and the inside fixed oxide defects are obviously reduced by using high quality HZO layer. Through the dielectric engineering of HZO, the MOS-HEMT with HZO dielectric shows an enhanced DC output performance with an increase of 54% at the optimal working condition, which is indeed much higher than that of the HfO2 MOS-HEMT (40%). And the HZO MOS-HEMT exhibits a higher I-on/I-off ratio of 10(6), an excellent subthreshold swing (SS) of 85 mV/decade, and a higher voltage swing (GVS). The gate leakage is reduced by nearly 8 orders of magnitude compared to the conventional unpassivated HEMTs (conv. HEMT) at the gate voltage of -5 V. These results are mainly caused by the replacement of the low-height Schottky barrier (SB) and the reduction of interface traps density. In order to further investigate the interfacial and electric properties of HZO MOS-HEMT, the dynamic gate/drain voltage and high-frequency capacitance-voltage (C-V) measurements are both applied. Remarkably, no measurable current collapse and C-V hysteresis are clearly observed, showing the enhanced interfacial and electric performances of the MOS-HEMT with dielectric engineering of HZO.

Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R}_{\textsc{on}}$ in GaN MOSHEMT With ZrO$_{\text{2}}$ Gate Dielectric

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

Investigation of the Threshold Voltage Drift in Enhancement Mode Gan Mosfet under Negative Gate Bias Stress

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs with Partially Recessed Gate and ZrOₓ Charge Trapping Layer

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON As Composite Gate Dielectric

Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture

Normally-off GaON/p-GaN Gate HEMTs with Selective Plasma Oxidation: from Structural Characterization, Performance Improvement to Physical Mechanism

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT

Normally-off GaON/p-GaN gate HEMTs with using selective plasma oxidation: from structural characterization, performance improvement to physical mechanism

Dependence of ${v}_{\text {TH}}$ Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET

The Transition of Threshold Voltage Shift of Al$_{\text{2}}$O$_{\text{3}}$/Si$_{\text{3}}$N$_{\text{4}}$ AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC

A Study on the Threshold Voltage Shift under Gate-pulse Stress in D-mode GaN MIS-HEMTs

Atomic Layer Deposition of ZrO2 As Gate Dielectrics for AlGaN/GaN Metal-Insulator-semiconductor High Electron Mobility Transistors on Silicon

Improved breakdown voltage and dynamic R on characteristics in normally-off GaN-based HEMTs featuring fully-recessed and bilayer-dielectric gate structure

Experimental Investigation on Threshold Voltage Instability for β-Ga 2 O 3 MOSFET Under Electrical and Thermal Stress

Enhanced Performances of AlGaN/GaN HEMTs with Dielectric Engineering of HfZrOx

High-VTH E-Mode GaN HEMTs with Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped P-Gan Engineering

Threshold Voltage Instability of Enhancement-Mode GaN Buried <i>p</i>-Channel MOSFETs

Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text{2}}$-Based Ferroelectric Gate AlGaN/GaN HEMTs With Steep Subthreshold Swings

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress