Abstract:Electron microscopy has been revolutionized by the advent of the aberration corrector and advances in detector both for imaging and spectroscopy. Aberration correction dramatically improved spatial resolution into the sub-ångstrom regime, while new detectors have unlocked information about materials that was previously only imaginable.While these recent advances have proven essential to the atomic scale characterization of materials, many measurements have remained largely semi-quantitative. In particular, accuracy and precision for scanning transmission electron microscopy (STEM) was significantly hampered by the presence of sample drift and scan distortion. Until recently, this limitation has obscured the capabilities to characterize minute changes to the atomic structure that can ultimately define material properties. In this talk, we will introduce revolving scanning transmission electron microscopy (RevSTEM) for the characterization of semiconductors. The method uses a series of fast-acquisition STEM images, but with the scan coordinates rotated between successive frames. This scan rotation introduces a concomitant change in image distortion that is then used to analyze the sample drift rate and direction. Multiple case studies will be presented to demonstrate the power of this technique to characterize electronic materials. For example, we will show how picometer level precision and accuracy enabled the capability to directly quantify ferroelectric HfO2 thin films. We will also show how RevSTEM images can be used to accurately determine crystallographic parameters in real-space, and to determine the structural origins of polarization. When combined with modern spectroscopy tools, the technique can directly inform growth mechanisms in AlN based materials for fabrication of quantum well structures. Specifically, We will show the interface quality between various AlGaN/AlN quantum wells using a combination of high-angle annular dark-field (HAADF) imaging and energy dispersive X-ray spectroscopy (EDS). We will show that we can directly measure the lattice parameters for each layer and how they vary across each AlN/AlGaN interface. Using EDS, we correlate the lattice parameters and lattice parameter values to the chemical composition in each layer. We show that throughout multiple quantum well structures, there is an asymmetrical interface with a diffusion of Ga on one side of the AlGaN layer. Further, we will discuss fluctuation in the composition present throughout each layer and the role on the local strain distribution.

Non-destructive Depth-Resolved Characterization of Residual Strain Fields in High Electron Mobility Transistors using Differential Aperture X-ray Microscopy

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Role of mechanical stress localizations on the radiation hardness of AlGaN/GaN high electron mobility transistors

Looking at the Nanomechanics of Electronic Devices under the Scanning Electronic Microscope

High precision two-dimensional strain mapping in semiconductor devices using nanobeam electron diffraction in the transmission electron microscope

Quantifying the Structure and Chemistry of Semiconductor Devices with the Latest Advancements in Scanning Transmission Electron Microscopy

HAADF-STEM block-scanning strategy for local measurement of strain at the nanoscale

A Non-Destructive Channel Stress Characterization for Gate-All-Around Nanosheet Transistors by Confocal Raman Methodology

Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy

Residual Stress Characterization in Microelectronic Manufacturing: an Analysis Based on Raman Spectroscopy

Quantitative Nanoscale Local Strain Profiling in Embedded Sige Metal-Oxide-Semiconductor Structures

Atomic‐scale Strain Analysis for Advanced Si/SiGe Heterostructure by Using Transmission Electron Microscopy

Low temperature recovery of OFF-state stress induced degradation of AlGaN/GaN high electron mobility transistors

Three Dimensionial Surface Modelling: A Novel Analysis Technique for Non-Destructive X-Ray Diffraction Imaging of Semiconductor Die Warpage & Strain in Fully Encapsulated Integrated Circuits

Apparatus and method for measuring electro-mechanical property and microstructure of nano material in stress condition

Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy

Nanoscale Deformation Analysis With High-Resolution Transmission Electron Microscopy and Digital Image Correlation

Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or convergent beams vs. plane waves).

Dose-efficient strain mapping with high precision and throughput using cepstral transforms on 4D-STEM data

Sub-diffraction Limit Thermal Imaging for HEMT Devices

Optical Nanoscopy of High-Tc Cuprate Nano-Constriction Devices Patterned by Helium Ion Beams