Dose-efficient strain mapping with high precision and throughput using cepstral transforms on 4D-STEM data

D. Muller,K. P. Harikrishnan,L. Mele,Y. Shao,C. Mitterbauer,Da-Woon Yoon
DOI: https://doi.org/10.1017/S143192762100725X
IF: 4.0991
2021-07-30
Microscopy and Microanalysis
Abstract:Strain mapping of nanomaterials with high precision and spatial resolution is becoming increasingly important in the semiconductor industry, with typical industry targets of 0.01-0.1% and 1 nm respectively. Here, we demonstrate the potential of the exit wave power cepstral (EWPC) transform [1] as a fast and dose-efficient technique to perform strain mapping using 4D-STEM datasets. This method exploits the high dynamic range and fast readout speed of modern direct electron detectors, with the precision determined by the maximum dose, and the largest usable angle, rather than the number of pixels. The EWPC transform exploits the periodicity in the diffraction pattern rather than the exact positions of the diffracted disks and hence works well even with only a few pixels per diffracted disk leading to more compact, memory-efficient data sets. Moreover, this technique does not require any pre-processing or parameter tuning based on experimental conditions, and reduces diffraction artefacts from tilt and thickness. These factors combined with a very fast runtime (1-10 ms/pixel) makes this technique potentially well suited for high-throughput applications. We performed strain mapping on silicon wedges and benchmarked the performance of the EWPC technique with other popular strain mapping algorithms. We find that 4D STEM data collection on the EMPAD detector [2]
Physics,Engineering,Materials Science
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