Abstract:The concept of memory that can only be read but cannot be changed seems strange at first. In reality, it is found that it has great application potential, such as the processor with a fixed purpose, the initial set value of the microprocessor BIOS, and these data are stored in Programmable Read-Only Memory (PROM) to quickly realize system functions. The PROM storage content is fixed, greatly simplifying his design. The radiation of space particles is the main factor causing the failure of the electronic system of spacecraft. The PROM storage array of the space electronic system is the most basic guarantee for the normal operation of the electronic system. The chip adopts domestic 130 nm standard technology of Complementary Metal Oxide Semiconductor (CMOS), Muller-C digital filter is used in the peripheral subsystem of PROM storage array, and the core cell uses Dual Interlocked Cell (DICE) and ring gate and other radiation hardening technologies to design a 32Kx8bit radiation resistant asynchronous programmable PROM. Pre-silicon of devices was verified by Technology Computer Aided Design (TCAD), and post silicon radiation verification was completed through radiation experiment. The post silicon radiation experiment showed that the total ionizing Dose (TID) capacity of the PROM chip was ≥100 Krad (Si), the critical value of single event upset (SEU) was ≥37.1 MeV·cm 2 /mg, the critical value of single event latch up was ≥98 MeV·cm 2 /mg, meeting the life requirements of the initial value storage of aerospace electronic systems. These performances ensure the reliable operation of the space electronic system after restart.

A Radiation-Hardened Programmable Read Only Memory for Space Applications.

Characterization of Single Event Effect in a Radiation Hardened Programmable Read-Only Memory in a 130 nm Bulk CMOS Technology

A robust radiation resistant SRAM cell for space and military applications

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

Single-Event Multiple Effect Tolerant RHBD14T SRAM Cell Design for Space Applications

Highly Stable Radiation-Hardened Resistive-Switching Memory

Radiation-Hardened 14T SRAM Bitcell with Speed and Power Optimized for Space Application

A highly stable and low‐cost 12T radiation hardened SRAM cell design for aerospace application

A Novel SEU Tolerant Memory Cell for Space Applications.

Radiation Hardened 12T SRAM with Crossbar-Based Peripheral Circuit in 28nm CMOS Technology

Design of Radiation Hardened SRAM Cell using Dopingless Transistor for Space Applications

A Reliable and high performance Radiation Hardened Schmitt Trigger 12T SRAM cell for space applications

Total Dose Radiation Experiments In Cmos/Soi 4kb Sram

Radiation Hardened Read Circuit with High Reliability for SOI Based SONOS Memory

RadHard 16Mbit Monolithic SRAM for Space Applications

A PD-SOI Based DTI-LOCOS Combined Cross Isolation Technique for Minimizing TID Radiation Induced Leakage in High Density Memory

Single-Event-Transient Resilient Memory for DSP in Space Applications

Design of SEU Tolerant Read Circuit for Non-Volatile Memories with high reliability

Design of Highly Reliable 14T and 16T SRAM Cells Combined with Layout Harden Technique

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

Radiation-hardened Library Cell Template and Its Total Ionizing Dose (TID) Delay Characterization in 65nm CMOS Process