A radiation-hardened hybrid RRAM-based non-volatile latch

Yue Ma,Xueqin Yang,Jinshun Bi,Kai Xi,Lanlong Ji,Haibin Wang
DOI: https://doi.org/10.1088/1361-6641/ac117b
IF: 2.048
2021-07-30
Semiconductor Science and Technology
Abstract:In this paper, a radiation-hardened resistive random-access memory (RRAM)-based non-volatile (NV) latch with a dual-interlocked storage cell is proposed and analyzed. The single-event effects of the proposed NV latch are simulated and discussed. Simulations of the proposed element are based on a 0.18 μm complementary metal-oxide-semiconductor design kit for the peripheral circuit and the voltage threshold adaptive memristor model for the RRAM. The simulation results indicate that the injected charge to induce a single-event upset (SEU) of the proposed NV latch is above 4.5 pC. As compared to the traditional RRAM based NV latch, the proposed NV latch is relatively immune to an SEU. This immunity from the SEU originates from the redundant storage nodes and interlocked feedback mechanism. Moreover, the area overhead of the proposed NV latch (eight transistors in the core storage element) are much lower than other radiation-hardened technology, e.g. TMR or FERST.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
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