Abstract:Spintronics aims to go beyond the charge-based paradigm of silicon-based microelectronics by utilizing the spin degree of freedom for memory, storage and computing applications. State-of-the-art spintronic devices rely on the manipulation of magnetic textures by spin torques that are generated from electrical currents within ferromagnets (FMs) (spin-transfer torque) or proximal heavy metals (spin-orbit torque). Although these concepts have led to important commercial applications, the use of FMs poses challenges owing to their stray fields, relatively slow dynamics and limited thermal stability. To overcome these challenges, new materials are needed, especially those that display negligible stray fields such as antiferromagnets (AFs). In this regard, synthetic AFs have been vitally important since their use in the very first spintronic field sensors and memories. Collinear AFs have found applications in stabilizing magnetic textures via interfacial exchange bias. Going beyond these classes of AFs, the family of non-collinear AFs (NCAFs) with triangular spin textures has attractive properties, some of them even reminiscent of FMs. These include, for example, large anomalous Hall and Nernst effects, and substantial magneto-optical responses, despite their nearly fully compensated magnetization. Thus, one can anticipate their use in substituting FMs in future spintronic devices. Furthermore, these novel AFs convert electrical currents to spin currents with unique symmetries, which may allow for new ways to manipulate spin textures. Here, we review recent developments in non-collinear antiferromagnetic spintronics. Emphasis is placed on spin current generation, switching of spin textures and applications in magnetic random access memory and racetrack memory, as well as so-far unexplored materials. We show that although key components of spintronic devices based on NCAFs have been demonstrated, a wide range of potential materials remain to be explored and many open questions remain to be answered. Thus, the field of NCAFs is a vibrant and exciting subfield of spintronics with much potential for next-generation memory and computing technologies.

Antiferromagnetic Spintronics in Magnetic Memory Devices

Ferrimagnets for spintronic devices: From materials to applications

Spin-transport, spin-torque and memory in antiferromagnetic devices: Part of a collection of reviews on antiferromagnetic spintronics

A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields

Perspectives on Antiferromagnetic Spintronics

Electric-Field-Controlled Antiferromagnetic Spintronic Devices

Functional Antiferromagnets for Potential Applications on High-Density Storage and High Frequency

An antiferromagnetic spin phase change memory

Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure

Van der Waals Spin-Orbit Torque Antiferromagnetic Memory

Non-collinear antiferromagnetic spintronics

All-in-One Magneto-optical Memory Arrays Based on a Two-Dimensional Ferromagnetic Metal

Spintronics for Energy- Efficient Computing: An Overview and Outlook

Efficient Spintronics With Fully Compensated Ferrimagnets

Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory

Current-induced Néel order switching facilitated by magnetic phase transition

Field‐Free Spin‐Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source (Adv. Electron. Mater. 4/2024)

An invisible non-volatile solid-state memory

Antiferromagnetic insulatronics: spintronics in insulating 3d metal oxides with antiferromagnetic coupling

Coherent antiferromagnetic spintronics

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing