Spin-transport, spin-torque and memory in antiferromagnetic devices: Part of a collection of reviews on antiferromagnetic spintronics

J. Železný,P. Wadley,K. Olejník. A. Hoffmann,H. Ohno

DOI: https://doi.org/10.48550/arXiv.1705.10675

2017-05-30

Abstract:Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets that represent the more common form of magnetically ordered materials, have so far found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstrations of the electrical switching and electrical detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated in antiferromagnets are inherently multilevel which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of the ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanics origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices

Mesoscale and Nanoscale Physics,Other Condensed Matter

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is how to apply antiferromagnetic materials to information storage and processing technologies, especially to develop new memory devices based on antiferromagnets. Specifically, the paper explores the following aspects:

1. **The application potential of antiferromagnetic materials**:
- Compared with ferromagnetic materials, antiferromagnetic materials have a higher ability to resist radiation and magnetic field interference, and can achieve multi - level storage, which gives them potential applications in neuromorphic computing.
- The switching speed of antiferromagnetic materials far exceeds that of existing ferromagnetic and semiconductor storage technologies.

2. **The possibility of electrical manipulation and detection of antiferromagnetic order**:
- Experimentally, the electrical switching and detection of Néel order by current have been demonstrated, which paves the way for memory devices based on antiferromagnetic materials.
- The paper discusses how to use spin - transport and spin - torque phenomena to read and write the information stored in antiferromagnetic materials.

3. **Theoretical and experimental progress**:
- The paper reviews the theoretical and experimental progress in electron spin - transport and spin - torque phenomena in antiferromagnetic materials in recent years, which mainly originate from relativistic quantum mechanical effects.
- It emphasizes the practical feasibility of using these phenomena in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

4. **Challenges and future directions**:
- It points out the current challenges, such as how to achieve reliable spin - transport and spin - torque effects in actual devices, and how to overcome the defects in material preparation (such as interface steps).
- It proposes the future research directions, including optimizing device structures to improve performance, exploring new properties of non - collinear antiferromagnetic materials, etc.

In summary, this paper aims to explore the potential of antiferromagnetic materials in the field of information storage, especially the possibility of manipulating and detecting antiferromagnetic order by electrical methods, so as to promote the development of next - generation high - speed, high - density, and anti - interference memory devices.