Abstract:Two-dimensional van der Waals (2D vdW) ferromagnets possess outstanding scalability, controllable ferromagnetism, and out-of-plane anisotropy, enabling the compact spintronics-based non-volatile in-memory computing (nv-IMC) that promises to tackle the memory wall bottleneck issue. Here, by employing the intriguing room-temperature ferromagnetic characteristics of emerging 2D Fe3GeTe2 with the dissimilar electronic structure of the two spin-conducting channels, we report on a new type of non-volatile spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device based on Fe3GeTe2/MgO/Fe3GeTe2 heterostructure, which demonstrates the uni-polar and high-speed field-free magnetization switching by adjusting the ratio of field-like torque to damping-like torque coefficient in the free layer. Compared to the conventional 2T1M structure, the developed 3-transistor-2-MTJ (3T2M) cell is implemented with the complementary data storage feature and the enhanced sensing margin of 201.4% (from 271.7 mV to 547.2 mV) and 276% (from 188.2 mV to 520 mV) for reading "1" and "0", respectively. Moreover, superior to the traditional CoFeB-based MTJ memory cell counterpart, the 3T2M crossbar array architecture can be executed for AND/NAND, OR/NOR Boolean logic operation with a fast latency of 24 ps and ultra-low power consumption of 2.47 fJ/bit. Such device to architecture design with elaborated micro-magnetic and circuit-level simulation results shows great potential for realizing high-performance 2D material-based compact SOT magnetic random-access memory, facilitating new applications of highly reliable and energy-efficient nv-IMC.

All-in-One Magneto-optical Memory Arrays Based on a Two-Dimensional Ferromagnetic Metal

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

Van der Waals Spin-Orbit Torque Antiferromagnetic Memory

Three-Dimensional Magnetic Page Memory

Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure

Antiferromagnetic Spintronics in Magnetic Memory Devices

Field‐Free Perpendicular Magnetic Memory Driven by Out‐of‐Plane Spin‐Orbit Torques

Two-dimensional materials prospects for non-volatile spintronic memories

Toward Ultimate Memory with Single-Molecule Multiferroics

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer

Towards Ultimate Memory with Single-Molecule Multiferroics

Field-Free Spin–Orbit Torque Switching via Oscillatory Interlayer Dzyaloshinskii–Moriya Interaction for Advanced Memory Applications

An Antiferromagnetic Neuromorphic Memory Based on Perpendicularly Magnetized CoO

Integrated Memory Devices Based on 2D Materials

Engineering large perpendicular magnetic anisotropy in amorphous ferrimagnetic gadolinium cobalt alloys

Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature

Deterministic and non-volatile switching of all-van der Waals spin-orbit torque system above room temperature without external magnetic fields

Electrically Reconfigurable 3D Spin‐Orbitronics

A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical Heterojunction Memory