Abstract:The exponential growth of data across various domains of human society necessitates the rapid and efficient data processing. In many contemporary data-intensive applications, similarity computation (SC) is one of the most fundamental and indispensable operations. In recent years, In-memory computing (IMC) architectures have been designed to accelerate SC by reducing data movement costs, however, they encounter challenges with signal domain conversion, variation sensitivity, and limited precision. This paper proposes a ferroelectric FET (FeFET) based time-domain (TD) associative memory (AM) for energy efficient SC. Such TD design can convert its output (i.e., time interval) to digits with relatively simple sensing circuitry thus saves large amount of area and energy compared with conventional IMC designs that process analog voltage/current signals. The variable-capacitance (VC) delay chain structure in our design supports quantitative SC and enhances robustness against variations. Furthermore, by exploiting multi-domain ferroelctric FET (FeFET), our design is capable of performing SC on vectors with multi-bit element, enabling support for higher-precision algorithms. Simulation results show that the proposed TD-AM achieves 13.8x/1.47x energy saving of our design compared to CMOS/NVM based TD-IMC designs. Additionally, our design exhibits good robustness in monte carlo simulation with variation extracted from experimental measurements. Investigation on precision of hyperdimensional computing (HDC) show that higher element precision reduces the size of HDC model when considering to achieve same accuracy, indicating an improved efficiency. Benchmarkings against GPU demonstrate in general 2/3 orders of magnitude speedup/energy efficiency improvement of our design. Our proposed multi-bit TD-AM promises energy-efficient quantitative SC for diverse intensive data processing application, especially in energy-constrained scenarios.

Symmetric 2-D-memory Access to Multidimensional Data.

Enabling New Computing Paradigms with Emerging Symmetric-Access Memories.

Energy-Aware Designs of Ferroelectric Ternary Content Addressable Memory.

FeFET-Based In-Memory Hyperdimensional Encoding Design

Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing

Ferroelectric Ternary Content Addressable Memories for Energy-Efficient Associative Search.

Analog Content Addressable Memory using Ferroelectric: A Case Study of Search-in-Memory

A FeFET-based Time-Domain Associative Memory for Multi-bit Similarity Computation

A 3t/cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs

Compact 3-D-SRAM Memory with Concurrent Row and Column Data Access Capability Using Sequential Monolithic 3-D Integration.

Circuit Level Memory Technologies and Applications based on 2D Materials

Nonvolatile Memory Design Based on Ferroelectric FETs.

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory

Integrated Memory Devices Based on 2D Materials

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array

Emerging 2D Memory Devices for In‐Memory Computing

FAST: A Fully-Concurrent Access Technique to All SRAM Rows for Enhanced Speed and Energy Efficiency in Data-Intensive Applications

Two-Direction In-Memory Computing Based on 10T SRAM With Horizontal and Vertical Decoupled Read Ports

FAST: A Fully-Concurrent Access SRAM Topology for High Row-Wise Parallelism Applications Based on Dynamic Shift Operations