Emerging 2D Memory Devices for In‐Memory Computing

Lei Yin,Ruiqing Cheng,Yao Wen,Chuansheng Liu,Jun He
DOI: https://doi.org/10.1002/adma.202007081
IF: 29.4
2021-06-08
Advanced Materials
Abstract:<p>It is predicted that the conventional von Neumann computing architecture cannot meet the demands of future data-intensive computing applications due to the bottleneck between the processing and memory units. To try to solve this problem, in-memory computing technology, where calculations are carried out in situ within each nonvolatile memory unit, has been intensively studied. Among various candidate materials, 2D layered materials have recently demonstrated many new features that have been uniquely exploited to build next-generation electronics. Here, the recent progress of 2D memory devices is reviewed for in-memory computing. For each memory configuration, their operation mechanisms and memory characteristics are described, and their pros and cons are weighed. Subsequently, their versatile applications for in-memory computing technology, including logic operations, electronic synapses, and random number generation are presented. Finally, the current challenges and potential strategies for future 2D in-memory computing systems are also discussed at the material, device, circuit, and architecture levels. It is hoped that this manuscript could give a comprehensive review of 2D memory devices and their applications in in-memory computing, and be helpful for this exciting research area.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
What problem does this paper attempt to address?
The problem this paper attempts to address is the performance bottleneck faced by traditional von Neumann architecture in data-intensive computing applications, particularly the data transfer delay and energy consumption issues caused by the separation of processing units and memory units. To tackle this challenge, the paper explores the application of novel memory devices based on 2D materials in in-memory computing technology. Specifically, the paper focuses on how to leverage the unique properties of 2D materials to construct high-performance, low-power memory devices, thereby achieving the integration of data processing and storage, and completely eliminating data access delays and energy losses. In-memory computing technology achieves large-scale parallel and distributed computing by performing computations within each memory cell, similar to neurobiological systems. This technology can fundamentally disrupt the traditional von Neumann architecture and improve the efficiency of computing systems. The paper discusses in detail the working mechanisms, performance characteristics, and advantages and disadvantages of different types of 2D memory devices, and demonstrates their significant progress in in-memory computing applications such as logic operations, electronic synapses, and random number generation. Finally, the paper also discusses the main challenges currently faced and potential strategies for future development, covering multiple levels including materials, devices, circuits, and architecture.