Abstract:The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-memory computing uses the same basic device structure for logic operations and data storage<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41586-020-2861-0#ref-CR3">3</a>, thus promising to reduce the energy cost of data-centred computing substantially<a href="/articles/s41586-020-2861-0#ref-CR4">4</a>. Although there is ample research focused on exploring new device architectures, the engineering of material platforms suitable for such device designs remains a challenge. Two-dimensional materials<a href="/articles/s41586-020-2861-0#ref-CR5">5</a>,<a href="/articles/s41586-020-2861-0#ref-CR6">6</a> such as semiconducting molybdenum disulphide, MoS2, could be promising candidates for such platforms thanks to their exceptional electrical and mechanical properties<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41586-020-2861-0#ref-CR9">9</a>. Here we report our exploration of large-area MoS2 as an active channel material for developing logic-in-memory devices and circuits based on floating-gate field-effect transistors (FGFETs). The conductance of our FGFETs can be precisely and continuously tuned, allowing us to use them as building blocks for reconfigurable logic circuits in which logic operations can be directly performed using the memory elements. After demonstrating a programmable NOR gate, we show that this design can be simply extended to implement more complex programmable logic and a functionally complete set of operations. Our findings highlight the potential of atomically thin semiconductors for the development of next-generation low-power electronics.

Application of Metal-Ferroelectric-Insulator-Semiconductor Field-Effect Transistors (mfisfets) in Non-Volatile Logic Integrated Circuits

Nonvolatile Ferroelectric Field-Effect Transistors.

Exploiting Ferroelectric FETs for Low-Power Non-Volatile Logic-in-memory Circuits

Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits

Design and Application of Ferroelectric Non-volatile Logic

Logic-in-memory application of silicon nanotube-based FBFET with core-source architecture

Harnessing Ferroelectrics for Non-Volatile Memories and Logic

NCFET Based Logic for Energy Harvesting Systems

Enabling Energy-Efficient Nonvolatile Computing with Negative Capacitance FET

Advancing Nonvolatile Computing with Nonvolatile NCFET Latches and Flip-Flops.

Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors.

Logic-in-memory based on an atomically thin semiconductor

Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices

Non-volatile logic-in-memory ternary content addressable memory circuit with floating gate field effect transistor

Ferroelectrically-enhanced Schottky barrier transistors for Logic-in-Memory applications

Reconfigurable logic-in-memory circuits with ferroelectric nanosheet field-effect transistors

High-efficient and Comprehensive Modeling of MFIM Ferroelectric Tunnel Junctions for Non-volatile/Volatile Applications

Strengthened Complementary Metal-Oxide-Semiconductor Logic for Small-Band-Gap Semiconductor-Based High-Performance and Low-Power Application

Dual Mode Ferroelectric Transistor Based Non-Volatile Flip-Flops for Intermittently-Powered Systems.

Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor

Multi-bit Nonvolatile Logic Implemented with Metal-Oxide Based Resistive Switching Device