Enabling Energy-Efficient Nonvolatile Computing with Negative Capacitance FET
Xueqing Li,John Sampson,Asif Khan,Kaisheng Ma,Sumitha George,Ahmedullah Aziz,Sumeet Kumar Gupta,Sayeef Salahuddin,Meng-Fan Chang,Suman Datta,Vijaykrishnan Narayanan
DOI: https://doi.org/10.1109/ted.2017.2716338
IF: 3.1
2017-01-01
IEEE Transactions on Electron Devices
Abstract:Negative capacitance FETs (NCFETs) have attracted significant interest due to their steep-switching capability at a low voltage and the associated benefits for implementing energy-efficient Boolean logic. While most existing works aim to avoid the ${I}_{D}$ – ${V}_{G}$ hysteresis in NCFETs, this paper exploits this hysteresis feature for logic-memory synergy and presents a custom-designed nonvolatile NCFET D flip-flop (DFF) that maintains its state during power outages. This paper also presents an NCFET fabricated for this purpose, showing <10 mV/decade steep hysteresisedges and high, up to seven orders inmagnitude, ${R}_{\text {DS}}$ ratio between the two polarization states. With a device-circuit codesign that takes advantage of the embedded nonvolatility and the high ${R}_{\text {DS}}$ ratio, the proposed DFF consumes negligible static current in backup and restore operations, and remains robust even with significant global and local ferroelectric material variations across a wide 0.3–0.8 V supply voltage range. Therefore, the proposed DFF achieves energy-efficient and low-latency backup and restore operations. Furthermore, it has an ultralow energy-delay overhead, below 2.1% in normal operations, and operates using the same voltage supply as the Boolean logic elements with which it connects. This promises energy-efficient nonvolatile computing in energy-harvesting and power-gating applications.