Abstract:The authors report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3). Leveraging enhanced polarization originating from the dipole coupling, the fabricated device exhibits a large memory window and nonvolatile memory characteristics with long retention time and stable cyclic endurance, providing a promising pathway for exploring low‐dimensional ferroelectronics. To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. Herein, the fabrication and application of an Fe‐FET, which is integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3), is reported. Leveraging enhanced polarization originating from the dipole coupling of CIPS and α‐In2Se3, the fabricated Fe‐FET exhibits a large memory window of 14.5 V at VGS = ±10 V, reaching a memory window to sweep range of ≈72%. Piezoelectric force microscopy measurements confirm the enhanced polarization‐induced wider hysteresis loop of the double‐stacked ferroelectrics compared to single ferroelectric layers. The Landau–Khalatnikov theory is extended to analyze the ferroelectric characteristics of a ferroelectric heterostructure, providing detailed explanations of the hysteresis behaviors and enhanced memory window formation. The fabricated Fe‐FET shows nonvolatile memory characteristics, with a high on/off current ratio of over 106, long retention time (>104 s), and stable cyclic endurance (>104 cycles). Furthermore, the applicability of the ferroelectrics heterostructure is investigated for artificial synapses and for hardware neural networks through training and inference simulation. These results provide a promising pathway for exploring low‐dimensional ferroelectronics.

Engineering Ferroelectric‐/Ion‐Modulated Conductance in 2D Vdw CuInP2S6 for Non‐Volatile Digital Memory and Artificial Synapse

An Electronic Synapse Based on 2D Ferroelectric CuInP2S6

Ferroelectric van der Waals heterostructures of CuInP2S6for non-volatile memory device applications

2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van der Waals Layered Material CuInP<sub>2</sub>S<sub>6</sub>

Two‐Dimensional Ferroionics: Conductive Switching Mechanisms And Transition Boundaries in Van Der Waals Layered Material CuInP2S6

Ferroelectric Polarization Enhanced Optoelectronic Synaptic Response of a CuInP2S6 Transistor Structure

Flexoelectric Engineering of Van Der Waals Ferroelectric CuInP2S6.

Multistate ferroelectric diodes with high electroresistance based on van der Waals heterostructures

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Ferroelectric Field-Effect Transistors Based on WSe2/CuInP2S6 Heterostructures for Memory Applications

Ion migration induced bipolar diode effect and ferroelectricity modulation in CuInP2S6

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

2D Memory Enabled by Electrical Stimulation‐Induced Defect Engineering for Complicated Neuromorphic Computing

Ferroelectric Field-Effect Transistors Based on WSe 2 /CuInP 2 S 6 Heterostructures for Memory Applications

Integrated In‐Memory Sensor and Computing of Artificial Vision Based on Full‐vdW Optoelectronic Ferroelectric Field‐Effect Transistor

Ferroelectric memory based on two-dimensional materials for neuromorphic computing

Ferroelectric materials for neuroinspired computing applications

Applying the Wake-Up-like Effect to Enhance the Capabilities of Two-Dimensional Ferroelectric Field-Effect Transistors.

Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO

Van Der Waals Ferroelectric Halide Perovskite Artificial Synapse

Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP2S6 Heterostructure