Abstract:The authors report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3). Leveraging enhanced polarization originating from the dipole coupling, the fabricated device exhibits a large memory window and nonvolatile memory characteristics with long retention time and stable cyclic endurance, providing a promising pathway for exploring low‐dimensional ferroelectronics. To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. Herein, the fabrication and application of an Fe‐FET, which is integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3), is reported. Leveraging enhanced polarization originating from the dipole coupling of CIPS and α‐In2Se3, the fabricated Fe‐FET exhibits a large memory window of 14.5 V at VGS = ±10 V, reaching a memory window to sweep range of ≈72%. Piezoelectric force microscopy measurements confirm the enhanced polarization‐induced wider hysteresis loop of the double‐stacked ferroelectrics compared to single ferroelectric layers. The Landau–Khalatnikov theory is extended to analyze the ferroelectric characteristics of a ferroelectric heterostructure, providing detailed explanations of the hysteresis behaviors and enhanced memory window formation. The fabricated Fe‐FET shows nonvolatile memory characteristics, with a high on/off current ratio of over 106, long retention time (>104 s), and stable cyclic endurance (>104 cycles). Furthermore, the applicability of the ferroelectrics heterostructure is investigated for artificial synapses and for hardware neural networks through training and inference simulation. These results provide a promising pathway for exploring low‐dimensional ferroelectronics.

Multistate ferroelectric diodes with high electroresistance based on van der Waals heterostructures

Multistate Ferroelectric Diodes with High Electroresistance Based on van der Waals Heterostructures

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Engineering Ferroelectric‐/Ion‐Modulated Conductance in 2D Vdw CuInP2S6 for Non‐Volatile Digital Memory and Artificial Synapse

Ferroelectric Field-Effect Transistors Based on WSe2/CuInP2S6 Heterostructures for Memory Applications

Ferroelectric Field-Effect Transistors Based on WSe 2 /CuInP 2 S 6 Heterostructures for Memory Applications

A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical Heterojunction Memory

Flexoelectric Engineering of Van Der Waals Ferroelectric CuInP2S6.

Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor

Applying the Wake-Up-like Effect to Enhance the Capabilities of Two-Dimensional Ferroelectric Field-Effect Transistors.

Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes

Ferroelectric van der Waals heterostructures of CuInP2S6for non-volatile memory device applications

A ferroelectric fin diode for robust non-volatile memory

Nonvolatile Ferroelectric Memory Effect in Ultrathin Α‐in2se3

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

High-performance Van Der Waals Antiferroelectric CuCrP2S6-based Memristors.

Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

A highly CMOS compatible hafnia-based ferroelectric diode

Photoferroelectric All-van-der-Waals Heterostructure for Multimode Neuromorphic Ferroelectric Transistors