Abstract:An outstanding potential of ferroelectric Hf0.5Zr0.5O2 ultra‐thin films to create a flexible non‐volatile memory is elucidated. CMOS‐compatible, highly flexible and resistant to tensile load ferroelectric Hf0.5Zr0.5O2‐based memory devices encapsulated in a biocompatible polyimide package exhibit excellent memory window and an excellent mechanical performance. Experimentally measured ferroelectric and dielectric properties under tension are explained by theoretical calculations. Next‐generation flexible electronics for healthcare applications require biocompatible flexible non‐volatile memory for data storage. Ultra‐thin ferroelectric hafnium oxide films offer great potential for flexible memories due to their potential flexibility and perfect compatibility with modern technologies. This study presents ultra‐flexible and stretchable memory devices based on 10‐nm‐thick Hf0.5Zr0.5O2 film fabricated by an innovative technology involving encapsulation of the devices in a biocompatible organic package. They exhibit high memory functionality (remanent polarization of 27 μC cm−2) and withstand extreme mechanical conditions, including folding in half, multiple bending up to 150 000 bending cycles as well as tension with loads up to 1.5 kg. Further, flexible devices are employed as a platform to elucidate the fundamental role of mechanical stress in ferroelectricity of hafnia both experimentally and theoretically. Direct in situ experiment demonstrates that in‐plane tension causes changes in spontaneous polarization, coercive voltage, permittivity, and conductivity. First‐principle calculations explain the role of mechanical stress in ferroelectric and dielectric properties of hafnia. In applications, this work establishes a foundation for the implementation of biocompatible, high‐performance flexible ferroelectric memory, and in the field of ferroelectric materials fundamentals, it provides insight into the critical role of the residual mechanical stress that is inevitably present in thin films.

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