Abstract:Post deposition annealing of molecular layer-deposited (MLD) hafnicone films was examined and compared to that of hafnium oxide atomic layer-deposited (ALD) films. Hafnicone films were deposited using tetrakis(dimethylamido)hafnium (TDMAH), and ethylene glycol and hafnia films were deposited using TDMAH and water at 120 °C. The changes in the properties of the as-deposited hafnicone films with annealing were probed by various techniques and then compared to the as-deposited and annealed ALD hafnia films. In situ X-ray reflectivity indicated a 70% decrease in thickness and ∼100% increase in density upon heating to 400 °C yet the density remained lower than that of hafnia control samples. The largest decreases in thickness of the hafnicone films were observed from 150 to 350 °C. In situ X-ray diffraction indicated an increase in the temperature required for crystallization in the hafnicone films (600 °C) relative to the hafnia films (350 °C). The changes in chemistry of the hafnicone films annealed with and without UV exposure were probed using Fourier transformed infrared spectroscopy and X-ray photoelectron spectroscopy with no significant differences attributed to the UV exposure. The hafnicone films exhibited lower dielectric constants than hafnia control samples over the entire temperature range examined. The CF4/O2 etch rate of the hafnicone films was comparable to the etch rate of hafnia films after annealing at 350 °C. The thermal conductivity of the hafnicone films initially decreased with thermal processing (up to 250 °C) and then increased (350 °C), likely due to porosity generation and subsequent densification, respectively. This work demonstrates that annealing MLD films is a promising strategy for generating thin films with a low density and relative permittivity.

Doping Ferroelectric Hafnium Oxide by in-Situ Precursor Mixing

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Ferroelectricity in the Al doped HfO2

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Ferroelectricity in dopant-free HfO2 thin films prepared by pulsed laser deposition

Effect of Lanthanum-Aluminum Co-Doping on Structure of Hafnium Oxide Ferroelectric Crystals.

Effect of Dopant Ordering on the Stability of Ferroelectric Hafnia

Impact of Four-Valent Doping on the Crystallographic Phase Formation for Ferroelectric HfO$_2$ from First-Principles: Implications for Ferroelectric Memory and Energy-Related Applications

Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf0.5Zr0.5O2

Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO $_{\text{2}}$ Film by Fast Ramping and Fast Cooling Process

Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties

The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices

Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO2 Deposited by RF Plasma Sputter

Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping

Chemical, Structural, and Electrical Changes in Molecular Layer-Deposited Hafnicone Thin Films after Thermal Processing

Lanthanum doped hafnium oxide thin films deposited on a lateral high aspect ratio structure using atomic layer deposition: A comparative study of surface composition and uniformity using x-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry

Tuning the ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes

Origin of Doping-Induced Endurance Improvement and Wake-up Effect Reduction in Ferroelectric Thin Films