Abstract:The comparison of Hf0.5Zr0.5O2/La0.67Sr0.33MnO3 (HZO/LSMO) systems with and without the LSMO top electrode reveals the LSMO's enhancement of HZO's structure and ferroelectric properties. The LSMO electrode prevents the formation of the nonpolar monoclinic phase and stabilizes the polar rhombohedral phase. Additionally, it improves leakage current, wake‐up effect, and fatigue behavior of HZO films by reducing the oxygen vacancies. Hafnium‐oxide‐based ferroelectrics have garnered considerable research interest, primarily for their robust ferroelectricity at the nanoscale and their high compatibility with complementary metal‐oxide‐semiconductors processes. However, the impact of electrodes on the ferroelectric properties of hafnium‐oxide layer, particularly that of top electrodes, is not yet fully understood even in the simplest capacitor geometry. In this study, the La0.67Sr0.33MnO3/Hf0.5Zr0.5O2 (LSMO/HZO) epitaxial heterostructure is utilized as a model system to conduct a systematic comparative study on ferroelectricity between the LSMO/HZO (H‐LS) bilayer and LSMO/HZO/LSMO (LS‐H‐LS) trilayer samples. In comparison to the H‐LS sample, the LS‐H‐LS sample exhibits a more uniform polar domain configuration and larger ferroelectric polarization. Moreover, the LS‐H‐LS sample exhibits significant improvements in leakage, endurance, and retention. These substantial enhancements in ferroelectricity are likely due to interfacial stress imposed by the LSMO capping layer and its capacity to accommodate extra oxygen vacancies. These results underscore the pivotal role of oxide‐based top electrodes in determining the ferroelectricity of hafnium‐oxide‐based heterostructures, providing crucial insights for optimizing the performance of innovative ferroelectric devices.

Modulation of Oxygen Content and Ferroelectricity in Sputtered Hafnia‐Zirconia by Engineering of Tungsten Oxide Bottom Electrodes

Enhanced Ferroelectric Polarization with Less Wake-Up Effect and Improved Endurance of Hf0.5Zr0.5O2 Thin Films by Implementing W Electrode

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Effects of Different Metal Electrodes on the Ferroelectric Properties of HZO Thin Films

Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility

Impact of Molybdenum Oxide Electrode on the Ferroelectricity of Doped-Hafnia Oxide Capacitors

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Optimizing the Ferroelectric Performance of Hf0.5Zr0.5O2 Epitaxial Film by La0.67Sr0.33MnO3 Capping Layer

Dual Al₂O₃/Hf₀.₅Zr₀.₅O₂ Stack Thin Films for Improved Ferroelectricity and Reliability

High performance and nearly wake-up free Hf 0.5 Zr 0.5 O 2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility

Optimal Process Design for Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Capacitors: Toward Low-Power Devices with Enhanced Ferroelectric Performance

High Performance and Nearly Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Capacitor Realized by Middle Layer Strategy with BEOL Compatibility

Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes

Effects of Deposition Power and Thermal Treatment on Ferroelectric Properties of Sputtered Hf0.5Zr0.5O2

Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

Tunable Defect Engineering of Mo/TiON Electrode in Angstrom-Laminated HfO$_2$/ZrO$_2$ Ferroelectric Capacitors towards Long Endurance and High Temperature Retention