BaRuO_3 Thin Film Electrode for Ferroelectric Lead Zirconate Titanate Capacitors

Rao K. V.

DOI: https://doi.org/10.1557/jmr.1999.0516

1999-01-01

Abstract:The characteristics of a ferroelectric Pb(Zr_0.52Ti_0.48)O_3 (PZT) capacitor on conductive BaRuO_3 thin films deposited by pulsed laser deposition (PLD) were investigated. The BaRuO_3 layer grown epitaxially on LaAlO_3(100) substrates at a substrate temperature of 700 °C was found to have a resistivity around 145 μΩ cm at 300 K. The subsequently deposited PZT film showed a c -axis orientation perpendicular to the substrate, and the remnant polarization, Δ P (= P * – P x), and coercive field, E C, of the capacitor were 24.7 μC/cm^2 and 52 kV/cm, respectively. Fatigue characteristics of the PZT on BaRuO_3 electrodes are far better than those obtained with polycrystalline PZT with Pt structures and comparable to those on epitaxial Yba_2Cu_3O_7− x electrodes. With the new metallic electrode, the PZT layer exhibits no serious degradation in fatigue endurance up to 10_10 cycles.