Abstract:Binary ruthenium dioxide (RuO2) has gradually attracted much attention in condensed matter physics and material sciences due to its various intriguing physical properties, such as strain-induced superconductivity, anomalous Hall effect, collinear anti-ferromagnetism, etc. However, its complex emergent electronic states and the corresponding phase diagram over a wide temperature range remain unexplored, which is critically important to understanding the underlying physics and exploring its final physical properties and functionalities. Here, through optimizing the growth conditions by using versatile pulsed laser deposition, high-quality epitaxial RuO2thin films with clear lattice structure are obtained, upon which the electronic transport is investigated, and emergent electronic states and the relevant physical properties are unveiled. Firstly, at a high-temperature range, it is the Bloch-Grüneisen state, instead of the common Fermi liquid metallic state, that dominates the electrical transport behavior. Moreover, the recently reported anomalous Hall effect is also revealed, which confirms the presence of the Berry phase in the energy band structure. More excitingly, we find that above the superconductivity transition temperature, a new positive magnetic resistance quantum coherent state with an unusual dip as well as an angel-dependent critical magnetic field emerges, which can be attributed to the weak antilocalization effect. Lastly, the complex phase diagram with multiple intriguing emergent electronic states over a wide temperature range is mapped. The results greatly promote the fundamental physics understanding of the binary oxide RuO2and provide guidelines for its practical applications and functionalities.

High-conductivity BaRuO3 thin film and its preparation by pulsed laser deposition

BARUO3 THIN-FILMS PREPARED BY PULSED-LASER DEPOSITION

Multiple Conduction Behavior of BaRuO 3 Thin Film Prepared by Pulsed Laser Ablation Deposition

Ca2RuO4 Thin Film Growth by Pulsed Laser Deposition

Pulsed Laser Deposition of Pzt/Baruo3 Bi-Layered Films on Silicon Substrate

BaRuO_3 Thin Film Electrode for Ferroelectric Lead Zirconate Titanate Capacitors

Epitaxial Srruo3 Thin Films on (001) Srtio3

Revealing the Hidden Heavy Fermi Liquid in CaRuO3

Phase transition from SrRuO3 to Sr3Ru2O7 by tuning oxygen pressure at low processing temperature

Synthesis Science Of Srruo3 And Caruo3 Epitaxial Films With High Residual Resistivity Ratios

Emergent weak antilocalization and wide-temperature-range electronic phase diagram in epitaxial RuO2thin film

Ruthenium Barrier/Seed Layer for Cu/Low-κ Metallization

Pulsed Excimer Laser Deposition of Pb(Zr,Ti)O3thin Films on Simox Substrates

Ru L 3 -Edge XANES Studies of A 2 RuO 4 and ARuO 3 (A = Ca, Sr, Ba) Ruthenates

Pulsed Laser Deposition and Characterization of Ferroelectric Pb(Zr,Ti)O-3 Thin Films on Silicon-On-Insulator Substrates

Highly Conductive RuO$_2$ Thin Films from Novel Facile Aqueous Chemical Solution Deposition

Pulsed Excimer Laser Deposition and Rapid Thermal Annealing of Ferroelectric Pb(Zr0.52Ti0.48)O3 Thin Films on Si-on-Insulator

Characterization of Pb(Zr,Ti)O-3 Thin-Films on Soi Prepared by Excimer-Laser Deposition

Microstructure and Ferromagnetic Property in CaRuO3 Thin Films with Pseudoheterostructure

Peald Ru/Ruox Films for Ulsi Applications and Its Transition Control Between Metal and Metal Oxide

Structural transformations and desirable electronic properties of low-temperature grown ruthenium oxide films under nitrogen atmosphere