Plasma etching and hydrogen blocking characteristics of PtOx thin films in ferroelectric capacitor fabrication

Chun-Kai Huang,Tai-Bor Wu

DOI: https://doi.org/10.1063/1.1610250

IF: 4

2003-10-13

Applied Physics Letters

Abstract:The use of a PtOx thin film as a transient template of Pt electrode in the fabrication of ferroelectric capacitor for memory devices was investigated. Fence-free patterning with a significantly high etch rate, selectivity, and sidewall slope was obtained from dry etching the photoresist-masked PtOx films using Ar/Cl2/O2 helicon wave plasma. The x-ray photoelectron spectroscopy analysis indicates that the redeposition of PtClx etch product can be repressed due to an in situ sidewall passivation with a PtO2 layer resulting from a further oxidation of the etched surface of PtOx film by the introduction of oxygen in the etching gas. Due to the chemical instability of oxygen in the PtOx film, a superior hydrogen blocking effect was also achieved in hydrogen plasma annealing of the Pb(Zr0.5Ti0.5)O3 (PZT) ferroelectric capacitors with the use of PtOx as the top electrode, and the hydrogen degradation of the PZT capacitor was repressed.

physics, applied