Abstract:By using sol-gel spin coating method nanostructured Pb(Zr0.53Ti0.47)O3(PZT) ferroelectric thin films were fabricated on the Si substrates coated by nanoporous alumina membranes with average pore sizes of 20-100nm,in which metal(Au or Pt)nanowires were embedded as a part of the bottom electrode.The dielectric,ferroelectric properties and microstructure of the nanostructured PZT thin films were characterized.The dielectric measurements demonstrated that the dielectric constant of the PZT nanofilms with a thickness of 25nm decreased quickly from 860 to 100 as increasing the frequency below 104 Hz,and then remained almost constant of 100 as further increasing the frequency up to 106 Hz.Such a fast decrease of the dielectric constant in the low frequency region was resulted from the dielectric relaxation of space charges accumulated at the interfaces between the nanofilm and the(bottom and top)metal electrodes.The dielectric loss peak observed near 4000Hz was contributed from the resonant absorption effect of the space charges.The polarization-electric field hystere-sis loops of the nanostructured PZT films with a thickness 100nm showed that the remanent polarization of the PZT nanofilm was 50μC/cm2 and coercive field of 500kV/cm.Cross-sectional TEM images showed that the nanostructured PZT films contacted directly with the bottom electrode(metal nanowires),and the interface between them exhibited some degree of waviness.It was found that some Au nanowires became into branches at their ends after post-annealing the PZT nanofilms,whereas such a phenomenon was effectively prohibited by using Pt nanowires.A selection of proper post-annealing temperature was the critical processing parameter for fabricating nanostructured PZT ferroelectric thin films as making a trade-off between the ordered metal nanowires within the nanoporous alumina membranes and the crystallinity of ferroelectric nanofilms.

Electrical Properties of Silicon-based Ferroelectric Thin Films Prepared by Sol-Gel Method

Study of silicon-based ferroelectric thin films prepared by Sol-Gel method

Study of silicon-based ferroelectric PZT thin films fabricated by sol-gel method

Preparation of PZT Thick Film by a High Speed Sol-gel Method

Study of Fabrication and Etching Processes of PZT Thin Films on Silicon

Electrical properties of a silicon-based PT/PZT/PT sandwich structure

Ferroelectric PbTiO 3 Thin Films

Preparation and characterization of Sol-Gel derived PZT bulk ceramics and thin films

Fabrication And Etching Processes Of Silicon-Based Pzt Thin Films

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Preparation and Characterization of a Sol-Gel Prepared Ferroelectric Sandwich Structure

Studies of a PT/PZT/PT Sandwich Structure for Feram Applications Using Sol-Gel Processing

Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor

THE PROCESSING EFFECTS ON STRUCTURE AND PROPERTIES OF SOL-GEL DERIVED PLZT FERROELECTRIC THIN FILMS

Interface and Surface Characterization of Lead Zirconate Titanate Thin Films Grown by Sol–Gel Method

Preparation and Etching of Silicon-Based Piezoelectric Thin Films for Integrated Devices

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O-3 Films on Silicon Wafers

Effectof annealing temperature onthe propertiesof PZTferroelectric thinfilms inthe processof RTPwithSol-gel method

Preparation and properties of PLZT thick films on silicon

Fabrication of Nanostructured PZT Ferroelectric Thin Films and Their Characterization