Abstract:Pb(Zr,Ti)O3 compositions are under investigation for applications that include integrated capacitors, piezoelectric sensors, and actuators. Sol–gel synthesis and spin coating are popular routes to the formation of high quality, dense, crack free, insulating films. However, the electrical properties of the films are often different than those measured for bulk specimens of the same composition. Pb(Zr0.53Ti0.47)O3 films were deposited from a 2-methoxyethanol based sol–gel system onto Pt/Ti/SiO2//Si substrates via spin-casting. Multiple layers were sequentially deposited and heat-treated to 650°C with the use of a PbO overcoat to ensure complete perovskite phase formation. Film thickness was varied from 0.19 to 0.5μm to study the effect of thickness and residual stress on the dielectric and piezoelectric properties of the polarizable and deformable material. Ex-situ wafer curvature measurements, combined with cross-sectional scanning electron microscopy, allowed for the determination of residual stresses in the thin films calculated by the Stoney equation. The macroscopic boundary conditions were then related to the measured properties of interest, namely dielectric constant, tan δ, and piezoelectric strain coefficient. Measured dielectric constants varied from ∼750 to ∼1000, while d33 values ranged from 30 to 44pm/V, as determined by single-beam heterodyne laser interferometry measurements.

Polarization Fatigue Resistance of Ca-doped Pb(Zr0.52Ti0.48)O3 Thin Films Prepared by the Sol–gel Method

Fatigue Suppression of Ferroelectric Pb1−xBax(Zr0.52Ti0.48)O3 Thin Films Prepared by Sol-Gel Method

Enhanced Fatigue-Endurance of Ferroelectric Pb1−xSrx(Zr0.52Ti0.48)O3 Thin Films Prepared by Sol-Gel Method

Polarization Fatigue Of Ferroelectric Pb(Zr0.1ti0.9)O-3 Thin Films: Temperature Dependence

Effects of Pb Excess and Temperature on Polarization Fatigue in Sol-Gel Derived Pb(Zr0.3ti0.7)O3 Thin Films

Electrical properties of undoped PZT and Co-doped PCZT films deposited on ITO/glass substrates by a sol-gel method

Temperature-dependent Fatigue Behaviors of Ferroelectric Pb(Zr0.52Ti0.48)O3 and Pb0.75La0.25TiO3 Thin Films

Polarization Fatigue and Photoinduced Current in ( Pb 0 . 72 La 0 . 28 ) Ti 0 . 93 O 3 Buffered Pb ( Zr 0 . 52 Ti 0 . 48 ) O 3 Films on Platinized Silicon

Thickness-dependent Electrical Properties of Sol–gel Derived Pb(Zr 0.52 Ti 0.48 )O 3 Thick Films Using PbTiO 3 Buffer Layers

Improved Dielectric and Ferroelectric Characteristics of Highly (111)-Oriented Pb(Zr0.52ti0.48)O-3 Films Produced by Sol-Gel Method

Effect of Fatigue on the Pyroelectric and Dielectric Properties of PZT Films

Polarization fatigue of ferroelectric Pb(Zr_xTi_(1-x_)O_3 thin films revisited

High-energy storage performance achieved in PbZrO3 thin films via Li+ doping and low-temperature annealing

Polarization Switching and Fatigue in Pb(Zr0.52ti0.48)O-3 Films Sandwiched by Oxide Electrodes with Different Carrier Types

Ferroelectric Characteristics Of Oriented Pb(Zr1-Xtix)O-3 Films

Sol–gel derived Pb(Zr,Ti)O3 thin films: Residual stress and electrical properties

Ferroelectricity of Rare Earth Eu Doped Sol-Gel Derived Pb(Zr X Ti 1−x )O 3 Thin Films

Electric Fatigue Properties of Pb(Zr,Ti)O-3 Thin Films Grown on Lanio3 Buffer Pt/Ti/Sio2/Si Substrate by Metalorganic Chemical Vapor Deposition

Enhanced Fatigue and Retention Properties of Pb(Ta0.05Zr0.48Ti0.47)O3 Films Using La0.25Sr0.75CoO3 Top and Bottom Electrodes

Thickness dependence of PbZr0.52Ti0.48O3 thin film ferroelectric parameters

Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor