Abstract:Polarization switching and fatigue properties of highly (117)-oriented Bi3.15Nd0.85Ti2.99Mn0.01O12 (BNTM) ferroelectric thin films were studied at both low and elevated temperatures (100 K up to 475 K). The fatigue behavior of BNTM thin films displays little dependence on temperature below 200 K, which can be explained by a weak domain wall pinning and unpinning effect. In the temperature range of 200 and 300 K, the polarization fatigue of BNTM films becomes exacerbated, which can be ascribed to a stronger domain pinning effect and increased electron injection from the Schottky barrier at film/electrode interfaces. However, the films showed improved fatigue endurance as the temperature increases from 300 to 400 K. From the temperature-dependent impedance spectra analysis we have learned that the long-range diffusion of oxygen vacancies within their clusters and strong domain unpinning effect may be responsible for this trend. Using the in-plane PFM phase image, observations of the microscopic evolution of domains and charged domain walls were made, and charged domain walls caused by head-to-head or tail-to-tail polarization configurations were found. Thus a combination of impedance spectra techniques and PFM domain observations can be a powerful technique, and has been used in this study to analyze the mechanisms of polarization fatigue at both low and elevated temperatures for the layered perovskite structure BNTM thin films.

Temperature-dependent Fatigue Behaviors of Ferroelectric Pb(Zr0.52Ti0.48)O3 and Pb0.75La0.25TiO3 Thin Films

Temperature-Dependent Fatigue Behaviors Of Ferroelectric Abo(3)-Type And Layered Perovskite Oxide Thin Films

Polarization Fatigue Of Ferroelectric Pb(Zr0.1ti0.9)O-3 Thin Films: Temperature Dependence

Fatigue Behaviors Of Bi3.25la0.75ti3o12/Pb(Zr0.52ti0.48)O-3/Bi3.25la0.75ti3o12 Trilayered Thin Films

Temperature-dependent Effect of Oxygen Vacancy on Polarization Switching of Ferroelectric Bi3.25La0.75Ti3O12 Thin Films

Fatigue Suppression of Ferroelectric Pb1−xBax(Zr0.52Ti0.48)O3 Thin Films Prepared by Sol-Gel Method

Identification of Interfacial and Bulk Effects in Modulating Fatigue Behaviors of Pb(Zr0.52Ti0.48)O3 Thin Films

TEMPERATURE-DEPENDENT FATIGUE BEHAVIORS OF FERROELECTRIC Bi4−xLaxTi3O12 THIN FILMS

Polarization Fatigue in Antiferroelectric (pb,la)(zr,ti)o3 Thin Films: the Role of the Effective Strength of Driving Waveform

Polarization fatigue of ferroelectric Pb(Zr_xTi_(1-x_)O_3 thin films revisited

Electric Fatigue Properties of Pb(Zr,Ti)O-3 Thin Films Grown on Lanio3 Buffer Pt/Ti/Sio2/Si Substrate by Metalorganic Chemical Vapor Deposition

Enhanced Fatigue-Endurance of Ferroelectric Pb1−xSrx(Zr0.52Ti0.48)O3 Thin Films Prepared by Sol-Gel Method

Switching fatigue of ferroelectric layered-perovskite thin films: temperature effect

Top-Interface-Controlled Fatigue Of Epitaxial Pb(Zr0.52ti0.48)O-3 Ferroelectric Thin Films On La0.7sr0.3mno3 Electrodes

Polarization Switching and Fatigue Characteristics of Highly (117)-Oriented Bi3.15nd0.85ti2.99mn0.01o12 Ferroelectric Thin Films at Both Low and Elevated Temperatures

Effects of Pb Excess and Temperature on Polarization Fatigue in Sol-Gel Derived Pb(Zr0.3ti0.7)O3 Thin Films

Effect of Fatigue on the Pyroelectric and Dielectric Properties of PZT Films

Low-Temperature Switching Fatigue Behavior of Ferroelectric Srbi2ta2o9 Thin Films

Temperature-dependent Ferroelectric Properties of (pb0.75la0.25)tio3 Thin Films

Polarization Fatigue and Photoinduced Current in ( Pb 0 . 72 La 0 . 28 ) Ti 0 . 93 O 3 Buffered Pb ( Zr 0 . 52 Ti 0 . 48 ) O 3 Films on Platinized Silicon

Polarization Switching and Fatigue in Pb(Zr0.52ti0.48)O-3 Films Sandwiched by Oxide Electrodes with Different Carrier Types