Abstract:Ferroelectric (piezoelectric) Pb (Zr 0.52 Ti 0.48 ) O 3 (PZT) films were synthesized using an aerosol-assisted chemical vapor deposition technique on (111) Pt/Ti/SiO 2 /Si substrates. The optimum deposition temperature was 350 °C, followed by annealing at 650 °C for 1 h. Tetragonal perovskite phase and preferred orientation {0 0 1} in the PZT films were determined by two-dimensional grazing incidence diffraction using synchrotron X-ray radiation and nano-beam electron diffraction (NBED). The PZT film grains' texture, represented by inverse pole representation, correlates with (0 0 1) and (1 1 1) orientations with approximate XRD peak distribution width of Ω ≈ 35°. The elastic-to-plastic transition of the piezoelectric-based structural deformation of the PZT films is represented by the pop-in, which marks the limit in the elastic behavior at the yield stress for which the material starts exhibiting permanent deformation, with the yield point being Y = 2.5 ± 0.7 GPa for the Pb (Zr 0.52 Ti 0.48 ) O 3 film. The hardness ( H = 7.5 ± 0.16 GPa), elastic modulus ( E = 126 ± 3 GPa), and scratching were evaluated at the nanoscale, using a nanoindentation technique. No delamination or cracks were observed near the residual scratching stage. The switching of piezoelectric domains and domain polarization process, as a function of films' texture, in the representative Pb (Zr 0.52 Ti 0.48 ) O 3 films, were studied using Piezoresponse Force Microscopy (PFM). The values of the saturation polarization, remnant polarization, coercive field, and piezoelectric constant were P s = 45 μC/cm 2 , P r =30 μC/cm 2 , E c = 22 kV/cm, and d 33 = 137 pm/V, respectively. The local piezoelectric hysteresis loops and film nanostructure correlate with the polarization orientation.

The post crystallization process of lead zirconate titanate films and effects on dielectric properties

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O-3 Films on Silicon Wafers

Combined Effect of Preferential Orientation and Zr/Ti Atomic Ratio on Electrical Properties of Pb(ZrxTi1−x)O3 Thin Films

Processing and Thickness Effects on the Microstructure and Electrical Properties of Sol–gel Deposited Pb(Zr, Ti)O3 Films

Preparation and Characterization of Sol–gel Derived (100)-Textured Pb(Zr,Ti)O3 Thin Films: PbO Seeding Role in the Formation of Preferential Orientation

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Effect of Substrate-induced Strains on Ferroelectric and Dielectric Properties of Lead Zirconate Titanate Films Prepared by the Sol-gel Technique

Lead zirconate titanate ceramics with aligned crystallite grains

Properties of multi-layered PZT films

THE PROCESSING EFFECTS ON STRUCTURE AND PROPERTIES OF SOL-GEL DERIVED PLZT FERROELECTRIC THIN FILMS

Preparation and characterization of Sol-Gel derived PZT bulk ceramics and thin films

Effect of the orientation polarization and texturing on nano-mechanical and piezoelectric properties of PZT (52/48) films

Interface and Surface Characterization of Lead Zirconate Titanate Thin Films Grown by Sol–Gel Method

Effect of Wet Etching on Properties of Lead Zirconium Titanate During Integration Process

Low Temperature Process for Synthesis of (100) Textured Pb(Zr 0.48 Ti 0.52 )O 3 Thin Films on Si Substrate by Laser Lift-Off Transferring Technique

Effects of Pb Excess and Temperature on Polarization Fatigue in Sol-Gel Derived Pb(Zr0.3ti0.7)O3 Thin Films

Effect of pyrolysis temperature on preferential orientation and electrical properties of sol-gel derived lead zirconate titanate films

Mechanical Properties of Sol–gel Derived Lead Zirconate Titanate Thin Films by Nanoindentation

Characteristics of Sputtered Lead Zirconate Titanate Thin Films With Different Layer Configurations and Large Thickness

Preparation and Characterization of Pb(Zr,Ti)O3 Films on SrTiO3 Substrates

Effect of substrate and pre-sintering process on the microstructure of PZT thin film