Abstract:Epitaxial Pb(Zr,Ti)O3(PZT) films, 1.5–2.0μm in thickness, with a Zr∕(Zr+Ti) ratio ranging from 0.20 to 0.75 were grown on (100)c-,(110)c-, and (111)c-oriented SrRuO3∕∕SrTiO3 substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The effects the Zr∕(Zr+Ti) ratio had on the crystal structure, dielectric and ferroelectric properties, and piezoelectric response of these films with different crystal orientations were systematically investigated. We ascertained from x-ray-diffraction reciprocal-space-mapping analysis that (001)T-∕(100)T-∕(100)R-,(101)T-∕(110)T-∕(110)R-∕(101¯)R-, and (111)T-∕(111)R-∕(111¯)R-oriented films had epitaxially grown on the respective (100)c-,(110)c-, and (111)c-oriented SrRuO3∕∕SrTiO3 substrates. The constituent phase changed from a tetragonal single phase, a mixture phase of a tetragonal and rhombohedral, to a rhombohedral single phase with increasing Zr∕(Zr+Ti) ratio irrespective of the orientation of the substrates. However, the range of the Zr∕(Zr+Ti) ratio of the film with the mixture phase differed depending on crystal orientation. This suggests that the stress relaxation process applied from the substrates changed due to crystal orientation. The relative dielectric constant was maximum for films with the mixture phase regardless of the crystal orientation. Remanent polarization was also maximum for these films on the (111)cSrRuO3∕∕SrTiO3 substrates, while it was minimum on the (100)c- and (110)c-oriented SrRuO3∕∕SrTiO3 substrates. Films with two phases coexisting had larger electric-field-induced strain than films with a single tetragonal or rhombohedral phase for the (111)-oriented films, but there were no remarkable changes in the (100)- and (110)-oriented films. Small ac signal measurements suggested that domain-wall motions easily occurred in the (111)-oriented films with the mixture phase compared with other orientations. These results indicated that the larger field-induced strain of the (111)-oriented PZT films consisting of a mixture of tetragonal and rhombohedral phases largely contributed to extrinsic factors such as domain-wall motions and phase transformation due to the applied electric field.

Effect of Substrate-induced Strains on Ferroelectric and Dielectric Properties of Lead Zirconate Titanate Films Prepared by the Sol-gel Technique

Effect of Bottom Electrodes on Microstructures and Electrical Properties of Sol–gel Derived Pb(Zr0.53 Ti0.47)O3 Thin Films

Microstructure and Electrical Properties of Lead Zirconate Titanate Thin Films Deposited by Sol-Gel Method on La 0.7 Sr 0.3 MnO 3 /sio 2 /si Substrate

Electrical and Mechanical Properties of PZT Thin Films Prepared by Hybrid Process of Sol-Gel Technique and Laser Ablation

Combined Effect of Preferential Orientation and Zr/Ti Atomic Ratio on Electrical Properties of Pb(ZrxTi1−x)O3 Thin Films

Interface and Surface Characterization of Lead Zirconate Titanate Thin Films Grown by Sol–Gel Method

Preparation and Application of Lead Zirconate Titanate (PZT) Films Deposited by Hybrid Process: Sol-Gel Method and Laser Ablation

Comparison of PbZr1−xTixO3 Thin Films Deposited on Different Substrates by Liquid Delivery Metal Organic Chemical Vapor Deposition

Precursor-Monomer Method of Sol-Gel for Fabrication Pt/Pzt/Pt Ferroelectric Films

The post crystallization process of lead zirconate titanate films and effects on dielectric properties

In-situ study on piezoelectric responses of sol-gel derived epitaxial Pb[Zr,Ti]O 3 thin films on Si substrate

Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor

The Microstructure and Ferroelectric Properties of PbZr0.52Ti0.48O3 Films on Mica Substrates

Effect of Orientation on the Dielectric Properties of Pb0.97la0.02zr0.95ti0.05o3 (plzt) Antiferroelectric Thin Films

Structure and Electrical Properties of Rapid Thermally Annealed PZT Films Deposited Through Sol-Gel Process

Preferred orientation controlling of PZT (52–48) thin films prepared by sol–gel process

Electrical properties of undoped PZT and Co-doped PCZT films deposited on ITO/glass substrates by a sol-gel method

Sol–gel synthesis and characterization of PZT thin films on FTO/aluminoborosilicate glass substrates

Dependence of electrical properties of epitaxial Pb(Zr,Ti)O3 thick films on crystal orientation and Zr∕(Zr+Ti) ratio

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Effect of pyrolysis temperature on preferential orientation and electrical properties of sol-gel derived lead zirconate titanate films