Abstract:Background: Lead Zirconate Titanate (PZT) films were synthesized by sol gel technique. The growth of films on ITO, Si\SiO 2 \Ti\Au, Si\Au and Si\SiO 2 \Ti\Al substrates discussed. In this study, Zirconium nitrate, lead acetate, and Ti (IV) isoproxide used as raw materials. Besides, acetic acid used as a solvent and 2-methoxy ethanol used as a stabilizer for Ti structure. Along with this, PZT films have perovskite structure, thin-film perovskite structure with high dielectric properties and hysteresis loop have been investigated. Methods: The effects of the type’s substrate on dielectric properties the ferroelectric properties were investigated and compared PZT film which deposited in different substrates. The films annealed at 600°C to complete crystalline films. XRD shows tetragonal PZT films have a strong perovskite structure with [100] prefer plane orientation. SEM and cross-section technique used to study for PZT surface films. Results: The dielectric constant at room temperature was different values depending on the types of substrate. The dielectric properties of the PZT films measured at 1 kHz were 120-400 dielectric constant and dielectric loss 0.02-0.08 at room temperature and 1 kHz. Conclusion: The largest remnant polarization (Pr) and coercive field (Ec) are obtained for PZT film deposited on Si\SiO 2 \Ti\Au substrate, equal to 26.6 mC/cm 2 and 38.3 kV/cm, as compared to 16.3 mC/cm 2 and 32.2 kV/cm2 for PZT film deposited on ITO substrate.

Effect of sol temperature on structural, morphological and magnetic properties of PZT thin films on alumina substrate

Preparation of PZT Thick Film by a High Speed Sol-gel Method

Structure and Electrical Properties of Rapid Thermally Annealed PZT Films Deposited Through Sol-Gel Process

Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Epitaxial growth of (PbZr)TiO3 films on LaAlO3 by sol-gel method using inorganic zirconium source

Effect of pyrolysis temperature on preferential orientation and electrical properties of sol-gel derived lead zirconate titanate films

Thickness-dependent structural characteristics of sol–gel-derived epitaxial (PbZr)TiO3 films using inorganic zirconium salt

Low Temperature Preparation of Sol-Gel PZT Thin Film Annealed at 160°C by Hydrothermal Method

Low Temperature Preparation Of Sol-Gel Pzt Thin Film Annealed At 160 Degrees C By Hydrothermal Method

Sol–gel synthesis and characterization of PZT thin films on FTO/aluminoborosilicate glass substrates

Stress-induced shifting of the morphotropic phase boundary in sol–gel derived Pb(Zr0.5Ti0.5)O3 thin films

Microstructure and Electrical Properties of Lead Zirconate Titanate Thin Films Deposited by Sol-Gel Method on La 0.7 Sr 0.3 MnO 3 /sio 2 /si Substrate

Electrical and Mechanical Properties of PZT Thin Films Prepared by Hybrid Process of Sol-Gel Technique and Laser Ablation

Preparation of Pb(Zr0.52TiO0.48)O3 Thin Films at Low-Temperature of Less Than 400°C by Hydrothermal Treatment Following Sol-Gel Deposition

Processing and Thickness Effects on the Microstructure and Electrical Properties of Sol–gel Deposited Pb(Zr, Ti)O3 Films

Effects of annealing temperature on structure and electrical properties of sol–gel derived 0.65PMN-0.35PT thin film

Effectof annealing temperature onthe propertiesof PZTferroelectric thinfilms inthe processof RTPwithSol-gel method

Effect of Substrate-induced Strains on Ferroelectric and Dielectric Properties of Lead Zirconate Titanate Films Prepared by the Sol-gel Technique

The effect of Barium substitution on the structural and dielectric properties of Pb1-XBaX(Zr0.52Ti0.43(Al0.5Sb0.5)0.05)O3 ceramics at the morphotropic phase boundary

Precursor-Monomer Method of Sol-Gel for Fabrication Pt/Pzt/Pt Ferroelectric Films