Impact of annealing atmosphere on the multiferroic and dielectric properties of BiFeO 3 /Bi 3.25 La 0.75 Ti 3 O 12 thin films

Fengzhen Huang,Xiaomei Lu,Zhe Wang,Weiwei Lin,Yi Kan,Huifeng Bo,Wei Cai,Jinsong Zhu
DOI: https://doi.org/10.1007/s00339-009-5297-9
2009-01-01
Applied Physics A
Abstract:Multiferroic BiFeO 3 /Bi 3.25 La 0.75 Ti 3 O 12 films annealed in different atmospheres (N 2 or O 2 ) were prepared on Pt/Ti/SiO 2 /Si substrates via a metal organic decomposition method. Based on our experimental results, it is considered that, in the films annealed in N 2 , fewer Fe 2+ ions while more oxygen vacancies are involved. As a result, at room temperature, predominated by the reduced Fe 2+ fraction, lower leakage current and dielectric loss, better ferroelectric property while reduced magnetization are observed. However, the oxygen vacancies might be thermally activated at elevated temperature; thus, more strongly temperature-dependent leakage current and a higher dielectric relaxation peak are observed for the films annealed in N 2 .
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