Structure, Ferroelectric, and Enhanced Fatigue Properties in Sol-Gel Processed New Bi-Based Perovskite Thin Films of Bi(Cu 1/2 Ti 1/2 )O 3 -PbTiO 3

Weibin Song,Guoqiang Xi,Zhao Pan,Jin Liu,Xubin Ye,Zhehong Liu,Xiao Wang,Pengfei Shan,Linxing Zhang,Nianpeng Lu,Longlong Fan,Xiaomei Qin,Youwen Long
DOI: https://doi.org/10.1088/1674-1056/ad2a71
2024-02-20
Chinese Physics B
Abstract:Bi-based perovskite ferroelectric thin films have aroused wide attentions in electronic devices due to their excellent ferroelectric properties. New Bi-based perovskite thin films Bi(Cu 1/2 Ti 1/2 )O 3 -PbTiO 3 (BCT-PT) were deposited onto Pt(111)/Ti/SiO 2 /Si substrates in the present study by the traditional sol-gel approach. Thereafter, structure and related ferroelectric as well as fatigue characteristics were carefully studied. The BCT-PT thin films exhibited good crystallization within the phase-pure perovskite structure, besides, they had a predominant (100) orientation together with a dense and homogeneous microstructure. The remnant polarization (2P r ) values at 30 μC/cm 2 and 16 μC/cm 2 were observed in 0.1BCT-0.9PT and 0.2BCT-0.8PT thin films, respectively. More intriguingly, although the polarization values are not so high, 0.2BCT-0.8PT thin films show outstanding polarization fatigue properties, with a high switchable polarization of 93.6% of the starting values after 10 8 cycles, indicating promising applications in ferroelectric memories.
physics, multidisciplinary
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