Effects of Ion Doping at Different Sites on Electrical Properties of Ferroelectric Bi4ti3o12 Ceramics
Yunyi Wu,Lei Wang,Zhiqiang Hua,Tao Li,Xuetao Yuan,Xudong Lv
DOI: https://doi.org/10.4028/www.scientific.net/amr.399-401.796
2011-01-01
Advanced Materials Research
Abstract:Pure, La3+doped at A site, V5+doped at B site, and La3+and V5+co-doped ferroelectric Bi4Ti3O12(BTO), Bi3.25La0.75Ti3O12(BLT), Bi4Ti2.98V0.02O3(BTV) and Bi3.25La0.75Ti2.98V0.02O12(BLTV) were successfully prepared by conventional sintering technique. The structures of the ceramics were investigated by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy. X-ray diffraction indicated that assemblages of all sintered ceramics consist of a single phase of Bi4Ti3O12, implying that the A-site La3+and B-site V5+substitutions in this case do not affect the layered structure. Among these ceramics, BLTV ceramic exhibited the best electrical properties. The leakage current density of BLTV ceramic was only 1.3×10-4Acm-2at 40 KVcm-1, two orders of magnitude lower than BTO ceramic. Besides, a saturated ferroelectric hysteresis loops with largest remnant polarization 2Pr of 30.6μC/cm2was observed for this sample. These suggested that the co-doped Bi4Ti3O12ceramic by La3+and V5+at A and B sites showed advantages in application over the pure BTO, doped BLT and BTV ceramic, respectively.